NUCLEATION AND GROWTH OF Cu THIN FILMS ON SILICON ...

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74 Noriah Bidin And Siti Noraiza Abd. RazakFigure 2. AFM images of SiCu thin film with magnification area of 1000 nm x 1000 nm of (a)silicon base and (b) silicon thin film after heat treatment, and poly-Si surface after ELA with laserfluences of (c) 65.50 mJcm -2 , (d) 137.25 mJcm -2 , (e) 206.16 mJcm -2 , (f) 264.38 mJ cm -2 , (g)345.00 mJ cm -2 , (h) 389.63 mJ cm -2 , and (i) 444.75 mJ cm -2 .Figure 3. Grain size as function of number of exposureAt slow rates of crystal growth (after conventional annealing), the interface between melt and solidremains planar, and growth occurs uniformly across the surface. At faster rates of crystal growth(excimer laser annealing), instabilities are occur; this leads to crystal growth. Solidification
Nucleation and Growth of Cu Thin Films on Silicon base Induced by Excimer Laser Annealing 75releases excess energy in the form of heat at the interface between solid and melt. At slow growthrates, the heat leaves the surface by diffusion. Rapid growth creates more heat, which is dissipatedby convection (liquid flow) when diffusion is too slow. Convection breaks the planar symmetry sothat crystal growth develops along columns. The 3D micrograph of AFM in Figure 2 have clearlyshown the nucleation and the growth of SiCu crystallization. Such nanostructure play an enormousrole in the metallization material which is beyond our scope to discuss in further detail.Figure 4. Surface roughness of Silicon Copper thin film a). after conventional heat treatment,b). single shot excimer laser annealing4. ConclusionThe nucleation and the growth of the SiCu crystallization was observed via atomic forcemicroscope. The transformation temperature of the excimer laser capable to melt the film higherthan decalesence point. As a results, the freezing meet the recalesence point which responsible tobegin spontaneous pattern formation. The crystallization was found varies with energy density.The maximum one is met at super lateral growth energy of 345 mJcm -2 . Beyond the critical energy,the solidification occur before meeting the recalesence point which result homogenousnanostructure formation.AcknowledgementThis work has been supported from the government of Malaysia via FRGS grant vote 4F001. Wewould like to acknowledge the support given by UTM through RMC for the performance and thefinancial management of this project.
Page 1 and 2: Jurnal Material dan Energi Indonesi
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NUCLEATION AND GROWTH OF Cu THIN FILMS ON SILICON ...

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