Kinetic and Strain-Induced Self-Organization of SiGe ...

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28 CHAPTER 2. MOLECULAR BEAM EPITAXY (MBE) necessary emergency stop. Single and complex epilayers can be programmed; the software controls all shutters, and regulates the sources to the appropriate temperatures in order to get the desired atomic fluxes and growth rates. Growth control parameters such as actual and nominal values are automatically recorded and saved for later re-view. The growth chamber is equipped with a RHEED-system (Reflection High Energy Electron Diffraction) for growth monitoring. It consists of a RHEED gun and a fluorescence screen that can be used to study or check the surface morphology during growth. [12, 53]
Chapter 3 Methods of Investigation This chapter is thought to give just a brief introduction to TEM and AFM, mainly on the basis of Ref. [73] regarding TEM, and basically summarizing the contents of Ref. [74] for the AFM related section. A more detailed overview, but still in a compact and comprehensive form are elaborated in the diploma-thesis [1]. In this work various experimental techniques have been used for investigating surface morphology and characterizing changes between different preparation steps. As small structures in the nanometer range will be characterized, standard optical microscopy faces its limits and therefore other experimental means – providing higher spacial resolution – have to be applied. For studying the structures in more detail, electron (optical) microscopy – namely Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) – and Atomic Force Microscopy (AFM) are suitable tools. However, each of these different methods for characterization has several advantages and disadvantages. With TEM the highest resolution can be obtained and TEM images additionally reveal structures below the surface, however, this technique requires a time-consuming sample preparation and provides small effective regions for analysis (sample-thickness ≤ 100nm!). For SEM the preparative effort is smaller and for AFM measurements almost no preliminary steps are required. Since in AFM measurements the surface morphology is probed using tips with physical dimensions that cannot be neglected, AFM images have to be regarded as image of the surface in convolution with the shape of the tip. 29
Page 1: J O H A N N E S K E P L E R U N I V
Page 4 and 5: ii PREFACE Kurzfassung Eine kinetis
Page 6 and 7: iv PREFACE
Page 8 and 9: vi CONTENTS 2.1.3 Growth-Modes . .
Page 10 and 11: viii CONTENTS B General Physical Da
Page 13 and 14: Chapter 1 Silicon-Germanium Materia
Page 15 and 16: 1.1. STRUCTURAL PROPERTIES 5 Figure
Page 17 and 18: 1.2. VICINAL SI(001) 7 Vicinal subs
Page 19 and 20: 1.3. ELECTRONIC PROPERTIES 9 Monoat
Page 21 and 22: 1.3. ELECTRONIC PROPERTIES 11 Silic
Page 23 and 24: 1.4. SILICON GERMANIUM ALLOYS (SI1
Page 25 and 26: Chapter 2 Molecular Beam Epitaxy (M
Page 27 and 28: 2.1. MBE-GROWTH 17 hit the substrat
Page 29 and 30: 2.1. MBE-GROWTH 19 Figure 2.3: The
Page 31 and 32: 2.2. CLEANING PROCEDURE 21 rameter
Page 33 and 34: 2.2. CLEANING PROCEDURE 23 H2SO4 :
Page 35 and 36: 2.3. MBE-SYSTEM 25 Figure 2.7: All-
Page 37: 2.3. MBE-SYSTEM 27 Figure 2.9: Sche
Page 41 and 42: 3.2. SCANNING ELECTRON MICROSCOPY (
Page 43 and 44: 3.3. ATOMIC FORCE MICROSCOPY (AFM)
Page 51: Part II Main Research 41
Page 54 and 55: 44 CHAPTER 4. SELF-ORGANIZED GROWTH
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78 CHAPTER 5. SELF-ORGANIZED GROWTH
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86 CHAPTER 6. P-MODULATION DOPING A
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100 CHAPTER 6. P-MODULATION DOPING
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Chapter 7 Transient-Enhanced Si Dif
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7.3. EXPERIMENTAL RESULTS 117 > 100
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7.3. EXPERIMENTAL RESULTS 119 Figur
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7.4. DETAILED CHARACTERIZATION AND
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7.4. DETAILED CHARACTERIZATION AND
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Chapter 8 Germanium Source Reconstr
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Figure 8.2: Elevated front-view of
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water lines. Figure 8.4: Photograph
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Figure 8.7: Part 2 of final constru
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Appendix A Calibration and Characte
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A.1. CALIBRATIONS 135 Figure A.1: X
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A.1. CALIBRATIONS 137 Figure A.3: N
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A.2. PHOTOLUMINESCENCE 139 Sample 1
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A.2. PHOTOLUMINESCENCE 141 Figure A
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A.2. PHOTOLUMINESCENCE 143 Figure A
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Appendix B General Physical Data B.
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Bibliography [1] Herbert Lichtenber
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BIBLIOGRAPHY 149 [42] M. B. Prince,
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BIBLIOGRAPHY 151 [85] J. Zhu, K. Br
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BIBLIOGRAPHY 153 [130] C. S. Peng,
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BIBLIOGRAPHY 155 [174] G. Medeiros-
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BIBLIOGRAPHY 157 [214] G. Bastard,
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Postface Curriculum Vitae ⋄ ∗ 1
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POSTFACE 161 � D. Gruber, D. Pach
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POSTFACE 163 Abbreviations AFM Atom
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