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Kinetic and Strain-Induced Self-Organization of SiGe ...

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Contents<br />

Preface i<br />

Eidesstattliche Erklärung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i<br />

Kurzfassung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii<br />

Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii<br />

I Basics 1<br />

1 Silicon-Germanium Material System 3<br />

1.1 Structural Properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4<br />

1.1.1 Crystal Orientation <strong>and</strong> Miller Indices . . . . . . . . . . . . . . . . . . 5<br />

1.2 Vicinal Si(001) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6<br />

1.2.1 Step Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7<br />

1.2.2 Step Types in Different Miscut Angle Regimes . . . . . . . . . . . . . 8<br />

1.3 Electronic Properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9<br />

1.3.1 B<strong>and</strong> Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9<br />

1.4 Silicon Germanium Alloys (Si1−xGex) . . . . . . . . . . . . . . . . . . . . . . 12<br />

1.4.1 B<strong>and</strong>structure <strong>of</strong> <strong>SiGe</strong>-Heterostructures . . . . . . . . . . . . . . . . . 12<br />

2 Molecular Beam Epitaxy (MBE) 15<br />

2.1 MBE-Growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15<br />

2.1.1 Fundamentals <strong>and</strong> Prerequisites . . . . . . . . . . . . . . . . . . . . . 15<br />

2.1.2 Physical Processes in the Growth-Chamber . . . . . . . . . . . . . . . 17<br />

v

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