BD533/535/537 NPN Epitaxial Silicon Transistor
BD533/535/537 NPN Epitaxial Silicon Transistor
BD533/535/537 NPN Epitaxial Silicon Transistor
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Typical characteristicshFE, DC CURRENT GAIN1000100VCE = 2VVCE(sat)[V], SATURATION VOLTAGE10.1IC = 10 IB<strong>BD533</strong>/<strong>535</strong>/<strong>537</strong>100.01 0.1 1 100.010.1 1 10IC[A], COLLECTOR CURRENTIC[A], COLLECTOR CURRENTFigure 1. DC current GainFigure 2. Collector-Emitter Saturation Voltage1.8VBE(sat)[V], SATURATION VOLTAGE1.71.61.51.41.31.21.11.00.90.80.70.6IC = 10 IB0.50.1 1 10IC[A], COLLECTOR CURRENT10 IC Max.1ms10msDC10µs100µs1<strong>BD533</strong>BD<strong>535</strong>BD<strong>537</strong>0.11 10 100IC[A], COLLECTOR CURRENTVCE[V], COLLECTOR-EMITTER VOLTAGEFigure 3. Base-Emitter Saturation VoltageFigure 4. Safe Operating Area8070PC[W], POWER DISSIPATION60504030201000 25 50 75 100 125 150 175 200TC[ o C], CASE TEMPERATUREFigure 5. Power Derating©2000 Fairchild Semiconductor InternationalRev. A, February 2000
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