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2SC2545, 2SC2546, 2SC2547 - ClassicCMP

2SC2545, 2SC2546, 2SC2547 - ClassicCMP

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<strong>2SC2545</strong>, <strong>2SC2546</strong>, <strong>2SC2547</strong>Silicon NPN EpitaxialApplication• Low frequency low noise amplifier• Complementary pair with 2SA1083, 2SA1084 and 2SA1085OutlineTO-92 (1)3211. Emitter2. Collector3. Base


<strong>2SC2545</strong>, <strong>2SC2546</strong>, <strong>2SC2547</strong>Absolute Maximum Ratings (Ta = 25°C)Item Symbol <strong>2SC2545</strong> <strong>2SC2546</strong> <strong>2SC2547</strong> UnitCollector to base voltage V CBO 60 90 120 VCollector to emitter voltage V CEO 60 90 120 VEmitter to base voltage V EBO 5 5 5 VCollector current I C 100 100 100 mAEmitter current I E –100 –100 –100 mACollector power dissipation P C 400 400 400 mWJunction temperature Tj 150 150 150 °CStorage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C2


<strong>2SC2545</strong>, <strong>2SC2546</strong>, <strong>2SC2547</strong>Electrical Characteristics (Ta = 25°C)<strong>2SC2545</strong> <strong>2SC2546</strong> <strong>2SC2547</strong>Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditionsCollector to basebreakdown voltageCollector to emitterbreakdown voltageEmitter to basebreakdown voltageV (BR)CBO 60 — — 90 — — 120 — — V I C = 10 µA, I E = 0V (BR)CEO 60 — — 90 — — 120 — — V I C = 1 mA,R BE = ∞V (BR)EBO 5 — — 5 — — 5 — — V I E = 10 µA, I C = 0Collector cutoff current I CBO — — 0.1 — — 0.1 — — 0.1 µA V CB = 50 V, I E = 0Emitter cutoff current I EBO — — 0.1 — — 0.1 — — 0.1 µA V EB = 2 V, I C = 0DC current transfer ratio h FE * 1 250 — 1200 250 — 1200 250 — 800 V CE = 12 V,I C = 2 mACollector to emittersaturation voltageV CE(sat) — — 0.2 — — 0.2 — — 0.2 V I C = 10 mA,I B = 1 mABase to emitter voltage V BE — 0.6 — — 0.6 — — 0.6 — V V CE = 12 V,I C = 2 mAGain bandwidth product f T — 90 — — 90 — — 90 — MHz V CE = 12 V,I C = 2 mACollector outputcapacitanceCob — 3.0 — — 3.0 — — 3.0 — pF V CB = 10 V, I E = 0,f = 1 MHzNoise voltage referredinpute n — 0.5 — — 0.5 — — 0.5 — nV/√HzNote: 1. The <strong>2SC2545</strong>, <strong>2SC2546</strong> and <strong>2SC2547</strong> are grouped by h FE as follows.D E F<strong>2SC2545</strong>, <strong>2SC2546</strong> 250 to 500 400 to 800 600 to 1200<strong>2SC2547</strong> 250 to 500 400 to 800 —V CE = 6V,I C = 10 mA,f = 1 kHz,R g = 0, ∆f = 1Hz3


<strong>2SC2545</strong>, <strong>2SC2546</strong>, <strong>2SC2547</strong>Collector Power Dissipation P C (mW)6004002000Maximum Collector Dissipation Curve50 100 150Ambient Temperature Ta (°C)Collector Current I C (mA)50403020100Typical Output Characteristics7060504030P C = 0.4 W2010 µAI B = 04 8 12 16 20Collector to Emitter Voltage V CE (V)Collector Current I C (mA)20161284Typical Output Characteristics252015105 µACollector Current I C (mA)10521.00.50.2Typical Transfer CharacteristicsV CE = 12 V0I B = 04 8 12 16 20Collector to Emitter Voltage V CE (V)0.100.2 0.4 0.6 0.8 1.0Base to Emitter Voltage V BE (V)4


<strong>2SC2545</strong>, <strong>2SC2546</strong>, <strong>2SC2547</strong>DC Current Transfer Ratio h FE5,0002,0001,000500200100500.1DC Current Transfer Ratio vs.Collector CurrentV CE = 12 VPulse0.2 0.5 1.0 2 5Collector Current I C (mA)10 20 50 100Collector to Emitter Saturation Voltage V CE(sat) (V)1.00.50.20.10.050.020.011Collector to Emitter Saturation Voltagevs. Collector CurrentI C = 10 I B2 5 10 20 50 100Collector Current I C (mA)Base to Emitter Saturation Voltage V BE(sat) (V)10521.00.50.20.11Base to Emitter Saturation Voltagevs. Collector Current2,000I C = 10 I B1,00050020010050202 5 10 20 50 1001Collector Current I C (mA)Gain Bandwidth Product f T (MHz)Gain Bandwidth Product vs.Collector CurrentV CE = 12 V2 5 10 20 50 100Collector Current I C (mA)5


<strong>2SC2545</strong>, <strong>2SC2546</strong>, <strong>2SC2547</strong>Collector Output Capacitance C ob (pF)1005020105210.5Collector Output Capacitance vs.Collector to Base VoltageI E = 0f = 1 MHz1.0 2 5 10Collector to Base Voltage V CB (V)20 50Signal Source Resistance R g (kΩ)100301031.00.30.1Contours of Constant Noise FigureV CE = 6 Vf = 1 kHzNF = 0.5 dB12460.03100.010.01 0.03 0.1 0.3 1.0 3 10 30 100Collector Current I C (mA)Signal Source Resistance R g (kΩ)100301031.00.30.10.03Contours of Constant Noise FigureNF = 0.5 dB124610V CE = 6 Vf = 120 HzSignal Source Resistance R g (kΩ)100301031.00.30.10.03Contours of Constant Noise FigureNF = 0.5 dBV CE = 6 Vf = 10 Hz1 2 4 6 100.010.01 0.03 0.1 0.3 1.0 3 10 30 100Collector Current I C (mA)0.010.01 0.03 0.1 0.3 1.0 3 10 30 100Collector Current I C (mA)6


Hitachi CodeJEDECEIAJWeight (reference value)TO-92 (1)ConformsConforms0.25 gUnit: mm4.8 ± 0.3 3.8 ± 0.35.0 ± 0.20.60 Max0.5 ± 0.10.72.3 Max12.7 Min0.51.272.54


Cautions1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2. Products and product specifications may be subject to change without notice. Confirm that you havereceived the latest product standards or specifications before final design, purchase or use.3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially highquality and reliability or where its failure or malfunction may directly threaten human life or cause riskof bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when usedbeyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeablefailure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes,so that the equipment incorporating Hitachi product does not cause bodily injury, fire or otherconsequential damage due to operation of the Hitachi product.5. This product is not designed to be radiation resistant.6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withoutwritten approval from Hitachi.7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductorproducts.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109URL NorthAmerica : http:semiconductor.hitachi.com/Europe: http://www.hitachi-eu.com/hel/ecgAsia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htmAsia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htmAsia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htmJapan: http://www.hitachi.co.jp/Sicd/indx.htmFor further information write to:Hitachi Semiconductor(America) Inc.179 East Tasman Drive,San Jose,CA 95134Tel: (408) 433-1990Fax: (408) 433-0223Hitachi Europe GmbHElectronic components GroupDornacher Stra§e 3D-85622 Feldkirchen, MunichGermanyTel: (89) 9 9180-0Fax: (89) 9 29 30 00Hitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: (1628) 585000Fax: (1628) 778322Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533Hitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167,Tun-Hwa North Road, Taipei (105)Tel: (2) 2718-3666Fax: (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong KongTel: (2) 735 9218Fax: (2) 730 0281Telex: 40815 HITEC HXCopyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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