BD533/535/537 NPN Epitaxial Silicon Transistor

Medium Power Linear and SwitchingApplications• Low Saturation Voltage• Complement to BD534, BD536 and BD538 respectivelyBD533/535/537BD533/535/537NPN Epitaxial Silicon Transistor1 TO-2201.Base 2.Collector 3.EmitterAbsolute Maximum Ratings T C =25°C unless otherwise notedSymbol Parameter Value UnitsV CBO Collector-Base Voltage : BD533: BD535: BD537V CES Collector-Emitter Voltage : BD533: BD535: BD537V CEO Collector-Emitter Voltage : BD533: BD535: BD537V EBO Emitter-Base Voltage 5 VI C Collector Current 8 AI B Base Current 1 AP C Collector Dissipation (T C =25°C) 50 WT J Junction Temperature 150 °CT STG Storage Temperature - 65 ~ 150 °CElectrical Characteristics T C =25°C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. UnitsI CBO Collector Cut-off Current : BD533: BD535: BD537I CES Collector Cut-off Current : BD533: BD535: BD537* Pulse Test: PW =300µs, duty Cycle =1.5% PulsedV CB = 45V, I E = 0V CB = 60V, I E = 0V CB = 80V, I E = 0V CE = 45V, V BE = 0V CE = 60V, V BE = 0V CE = 80V, V BE = 0I EBO Emitter Cut-off Current V EB = 5V, I C = 0 1 mAh FE * DC Current Gain : BD533/535: BD537: ALL DEVICE: BD533/535: BD537h FE h FE GroupsJ: ALL DEVICEK: ALL DEVICEV CE = 5V, I C = 10mAV CE = 2V, I C = 500mAV CE = 2V, I C = 2AV CE = 2V, I C = 2AV CE = 2V, I C = 3AV CE = 2V, I C = 2AV CE = 2V, I C = 3AV CE (sat) * Collector-Emitter Saturation Voltage I C = 2A, I B = 0.2AI C = 6A, I B = 0.6A 0.820154025153015402045608045608045608010010010010010010075100VVVVVVVVVµAµAµAµAµAµA0.8 VVV BE (on) * Base-Emitter ON Voltage V CE = 2V, I C = 2A 1.5 Vf T Current Gain Bandwidth Product V CE = 1V, I C = 500mA 3 12 MHz©2000 Fairchild Semiconductor International Rev. A, February 2000

Typical characteristicshFE, DC CURRENT GAIN1000100VCE = 2VVCE(sat)[V], SATURATION VOLTAGE10.1IC = 10 IBBD533/535/537100.01 0.1 1 100.010.1 1 10IC[A], COLLECTOR CURRENTIC[A], COLLECTOR CURRENTFigure 1. DC current GainFigure 2. Collector-Emitter Saturation Voltage1.8VBE(sat)[V], SATURATION VOLTAGE1.71.61.51.41.31.21.11.00.90.80.70.6IC = 10 IB0.50.1 1 10IC[A], COLLECTOR CURRENT10 IC Max.1ms10msDC10µs100µs1BD533BD535BD5370.11 10 100IC[A], COLLECTOR CURRENTVCE[V], COLLECTOR-EMITTER VOLTAGEFigure 3. Base-Emitter Saturation VoltageFigure 4. Safe Operating Area8070PC[W], POWER DISSIPATION60504030201000 25 50 75 100 125 150 175 200TC[ o C], CASE TEMPERATUREFigure 5. Power Derating©2000 Fairchild Semiconductor InternationalRev. A, February 2000

Package DemensionsTO-220BD533/535/5379.90 ±0.204.50 ±0.20(1.70)1.30 ±0.10(8.70)ø3.60 ±0.102.80 ±0.101.30 +0.10–0.059.20 ±0.2013.08 ±0.20(1.46)(1.00)1.27 ±0.10(45°)(3.00) (3.70)15.90 ±0.201.52 ±0.1010.08 ±0.30 18.95MAX.2.54TYP[2.54 ±0.20]0.80 ±0.102.54TYP[2.54 ±0.20]0.50 +0.10–0.052.40 ±0.2010.00 ±0.20Dimensions in Millimeters©2000 Fairchild Semiconductor International Rev. A, February 2000

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