2SJ160, 2SJ161, 2SJ162 - Jaycar Electronics

2SJ160, 2SJ161, 2SJ162Silicon P-Channel MOS FETApplicationLow frequency power amplifierComplementary pair with 2SK1056, 2SK1057 and 2SK1058Features• Good frequency characteristic• High speed switching• Wide area of safe operation• Enhancement-mode• Good complementary characteristics• Equipped with gate protection diodes• Suitable for audio power amplifier

1232SJ160, 2SJ161, 2SJ162OutlineTO-3PDGS1. Gate2. Source(Flange)3. DrainAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Ratings UnitDrain to source voltage 2SJ160 V DSX –120 V2SJ161 –1402SJ162 –160Gate to source voltage V GSS ±15 VDrain current I D –7 ABody to drain diode reverse drain current I DR –7 AChannel dissipation Pch* 1 100 WChannel temperature Tch 150 °CStorage temperature Tstg –55 to +150 °CNote: 1. Value at T C = 25°C2

2SJ160, 2SJ161, 2SJ162Electrical Characteristics (Ta = 25°C)Item Symbol Min Typ Max Unit Test conditionsDrain to source 2SJ160 V (BR)DSX –120 — — V I D = –10 mA , V GS = 10 Vbreakdown voltage 2SJ161 –140 — — V2SJ162 –160 — — VGate to source breakdownvoltageV (BR)GSS ±15 — — V I G = ±100 µA, V DS = 0Gate to source cutoff voltage V GS(off) –0.15 — –1.45 V I D = –100 mA, V DS = –10 VDrain to source saturationvoltageV DS(sat) — — –12 V I D = –7 A, V GD = 0* 1Forward transfer admittance |y fs | 0.7 1.0 1.4 S I D = –3 A, V DS = –10 V* 1Input capacitance Ciss — 900 — pF V GS = 5 V, V DS = –10V,Output capacitance Coss — 400 — pF f = 1 MHzReverse transfer capacitance Crss — 40 — pFTurn-on time t on — 230 — ns V DD = –20 V, I D = –4 ATurn-off time t off — 110 — nsNote:1. Pulse test3

2SJ160, 2SJ161, 2SJ162Channel Dissipation Pch (W)15010050Power vs. Temperature Derating0 50 100 150Case Temperature T C (°C)Drain Current I D (A)–20–10–5–2Maximum Safe Operation AreaI D max (Continuous)(–14.3 V,–7 A)PW = 100 ms (1 Shot)DC Operation (T C = 25°C)Ta = 25°CPW = 10 ms (1 Shot)–1.0(–120 V, –0.83 A) (–140 V, –0.71 A)(–160 V, –0.63 A)–0.52SJ1602SJ1612SJ162–0.2–5 –10 –20 –50 –100 –200 –500Drain to Source Voltage V DS (V)Drain Current I D (A)–10–8–6–4–2Typical Output Characteristics–9–8–7–6–5–4–3–2T C = 25°CPch = 100 W–1 VV = 0 GSDrain Current I D (A)–1.0–0.8–0.6–0.4–0.2Typical Transfer CharacteristicsV DS = –10 V25T C = –25°C750–10 –20 –30 –40 –50Drain to Source Voltage V DS (V)0–0.4 –0.8 –1.2 –1.6 –2.0Gate to Source Voltage V GS (V)4

2SJ160, 2SJ161, 2SJ162Drain to Source Saturation Voltage V DS (sat) (V)–10–5–2–1.0–0.5–0.2Drain to Source Saturation Voltagevs. Drain CurrentV GD = 02575T C = –25°C–0.1–0.1 –0.2 –0.5 –1.0 –2 –5 –10Drain Current I D (A)Drain to Source Voltage V DS (V)–10–8–6–40Drain to Source Voltage vs.Gate to Source Voltage–5–2 –2I D = –1 A–2 –4 –6 –8 –10Gate to Source Voltage V GS (V)Input Capacitance Ciss (pF)1,0005002001000Input Capacitance vs.Gate to Source VoltageV DS = –10 Vf = 1 MHz2 4 6 8 10Gate to Source Voltage V GS (V)Forward Transfer Admittance ⏐yfs⏐ (S)3.01.00.30.10.030.010.00310 kForward Transfer Admittancevs. FrequencyT C = 25°CV DS = –10 VI D = –2 A30 k100 k 300 k 1 M 3 M 10 MFrequency f (Hz)

2SJ160, 2SJ161, 2SJ162500Switching Time vs. Drain CurrentSwitching Time t on , t off (ns)200100502010t ont off5–0.1–0.2 –0.5 –1.0 –2 –5 –10Drain Current I D (A)Switching Time Test CircuitOutputR L10%WaveformsInputInput90%t on10%t offPW = 50 µsduty ratio= 1%50 Ω–20 VOutput90%6

15.6 ± 0.3φ3.2 ± 0.21.05.0 ± 0.34.8 ± 0.21.5Unit: mm0.51.61.4 Max 2.02.014.9 ± 0.218.0 ± 0.5 19.9 ± 0.20.32.81.0 ± 0.20.6 ± 0.23.6 0.91.05.45 ± 0.55.45 ± 0.5Hitachi CodeJEDECEIAJWeight (reference value)TO-3P—Conforms5.0 g

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