KSC1815 NPN Epitaxial Silicon Transistor

Typical Characteristics100100KSC1815I B = 400µAVCE=6VI C[mA], COLLECTOR CURRENT80604020I B = 350µAI B = 300µAI B = 250µAI B = 200µAI B = 150µAI B = 100µAI B = 50µAIC[mA], COLLECTOR CURRENT10100 4 8 12 16 20V CE[V], COLLECTOR-EMITTER VOLTAGE0.10.0 0.2 0.4 0.6 0.8 1.0 1.2VBE[V], BASE-EMITTER VOLTAGEFigure 1. Static CharacteristicFigure 2. Transfer CharacteristichFE, DC CURRENT GAIN1000VCE = 6V101 10 100 1000IC[mA], COLLECTOR CURRENTVBE(sat), VCE(sat)[mV], SATURATION VOLTAGE100001000100VBE(sat)VCE(sat)IC=10IB101 10 100 1000IC[mA], COLLECTOR CURRENTFigure 3. DC current GainFigure 4. Base-Emitter Saturation VoltageCollector-Emitter Saturation VoltageCob[pF], CAPACITANCE100f=1MHzIE=01011 10 100 1000fT[MHz],CURRENT GAIN-BANDWIDTH PRODUCT100010010VCE=6V10.1 1 10 100VCB[V], COLLECTOR-BASE VOLTAGEIC[mA], COLLECTOR CURRENTFigure 5. Output CapacitanceFigure 6. Current Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. A2, September 2002

Package DimensionsKSC1815TO-924.58 +0.25–0.153.86MAX0.46 ±0.101.27TYP[1.27 ±0.20]1.02 ±0.100.38 +0.10–0.051.27TYP[1.27 ±0.20]3.60 ±0.20(R2.29)(0.25) 14.47 ±0.404.58 ±0.200.38 +0.10–0.05Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

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