ISSCC2015AdvanceProgram

SESSION 2Session Chair:Associate Chair:Monday February 23 rd , 1:30 PMRF TX/RX Design TechniquesEhsan Afshari, Cornell University, Ithaca, NYMinoru Fujishima, Hiroshima University, Hiroshima, Japan2.1 A Highly Linear Inductorless Wideband Receiver with Phase- 1:30 PMand Thermal-Noise CancellationH. Wu 1,2 , M. Mikhemar 2 , D. Murphy 2 , H. Darabi 2 , M-C. F. Chang 11University of California, Los Angeles, CA; 2 Broadcom, Irvine, CA2.2 A +70dBm IIP3 Single-Ended Electrical-Balance Duplexer 2:00 PMin 0.18µm SOI CMOSB. van Liempd 1 , B. Hershberg 1 , K. Raczkowski 1 , S. Ariumi 2 ,U. Karthaus 3 , K-F. Bink 3 , J. Craninckx 11imec, Leuven, Belgium; 2 Murata, Kyoto, Japan3HiSilicon, Leuven, Belgium2.3 A 130-to-180GHz 0.0035mm 2 SPDT Switch with 3.3dB Loss and 2:15 PM23.7dB Isolation in 65nm Bulk CMOSF. Meng 1 , K. Ma 1 , K. S. Yeo 1,21Nanyang Technological University, Singapore, Singapore2Singapore University of Technology and Design, Singapore, Singapore2.4 A 0.028mm 2 11mW Single-Mixing Blocker-Tolerant Receiver 2:30 PMwith Double-RF N-Path Filtering, S 11 Centering, +13dBm OB-IIP3and 1.5-to-2.9dB NFZ. Lin 1 , P-I. Mak 1 , R. P. Martins 1,21University of Macau, Macau, China2Instituto Superior Tecnico, Lisbon, Portugal2.5 A 2-to-6GHz Class-AB Power Amplifier with 28.4% PAE in 65nm 2:45 PMCMOS Supporting 256QAMW. Ye 1 , K. Ma 1 , K. S. Yeo 1,21Nanyang Technological University, Singapore, Singapore2Singapore University of Technology and Design, Singapore, SingaporeBreak3:00 PM2.6 Class-O: A Highly Linear Class of Power Amplifiers in 0.13μm 3:15 PMCMOS for WCDMA/LTE ApplicationsA. F. Aref, R. Negra, M. Abdullah KhanRWTH Aachen University, Aachen, Germany2.7 A Hybrid Supply Modulator with 10dB ET Operation Dynamic 3:45 PMRange Achieving a PAE of 42.6% at 27.0dBm PA Output PowerS-C. Lee, J-S. Paek, J-H. Jung, Y-S. Youn, S-J. Lee, M-S. Cho, J-J. Han,J-H. Choi, Y-W. Joo, T. Nomiyama, S-H. Lee, I-Y. Sohn, T. B. Cho,B-H. Park, I. KangSamsung Electronics, Hwaseong, Korea2.8 A Broadband CMOS Digital Power Amplifier with Hybrid 4:15 PMClass-G Doherty Efficiency EnhancementS. Hu 1 , S. Kousai 2 , H. Wang 11Georgia Institute of Technology, Atlanta, GA; 2 Toshiba, Kawasaki, Japan2.9 A 29dBm 18.5% Peak PAE mm-Wave Digital Power Amplifier 4:45 PMwith Dynamic Load ModulationK. Datta, H. Hashemi, University of Southern California, Los Angeles, CA2.10 A 60GHz 28nm UTBB FD-SOI CMOS Reconfigurable Power 5:00 PMAmplifier with 21% PAE, 18.2dBm P 1dB and 74mW P DCA. Larie 1,2 , E. Kerhervé 2 , B. Martineau 1,3 , L. Vogt 1 , D. Belot 1,31STMicroelectronics, Crolles, France2University of Bordeaux, Talence, France3CEA-LETI-MINATEC, Grenoble, FranceConclusion5:15 PM14