ISSCC2015AdvanceProgram

SESSION 16Tuesday February 24 th , 1:30 PMEmerging Technologies Enabling Next-Generation SystemsSession Chair: Jan Genoe, imec, Leuven, BelgiumAssociate Chair: Koichi Nose, Renesas Electronics, Tokyo, Japan16.1 An Ultra-Thin Flexible CMOS Stress Sensor Demonstrated 1:30 PMon an Adaptive Robotic GripperY. Mahsereci 1 , S. Saller 2 , H. Richter 3 , J. Burghartz 31University of Stuttgart, Stuttgart, Germany2Festo, Esslingen, Germany; 3 IMS CHIPS, Stuttgart, Germany16.2 A Large-Area Image Sensing and Detection System Based 2:00 PMon Embedded Thin-Film ClassifiersW. Rieutort-Louis, T. Moy, Z. Wang, S. Wagner, J. C. Sturm, N. VermaPrinceton University, Princeton, NJ16.3 Flexible Thin-Film NFC Tags Powered by Commercial USB 2:30 PMDS Reader Device at 13.56MHzK. Myny 1 , B. Cobb 2 , J-L. van der Steen 2 , A. K. Tripathi 2 ,J. Genoe 1,3 , G. Gelinck 2 , P. Heremans 1,31imec, Heverlee, Belgium; 2 Holst Centre / TNO, Eindhoven, The Netherlands3KU Leuven, Leuven, Belgium16.4 Energy-Autonomous Fever Alarm Armband Integrating Fully 2:45 PMFlexible Solar Cells, Piezoelectric Speaker, TemperatureDetector, and 12V Organic Complementary FET CircuitsH. Fuketa 1,2 , M. Hamamatsu 1,2 , T. Yokota 1,2 , W. Yukita 1,2 , T. Someya 1,2 ,T. Sekitani 2,3 , M. Takamiya 1,2 , T. Someya 1,2 , T. Sakurai 1,21University of Tokyo, Tokyo, Japan2JST/ERATO, Tokyo, Japan; 3 Osaka University, Osaka, JapanBreak3:00 PM16.5 A NEMS-Array Control IC for Sub-Attogram Gravimetric 3:15 PMDS Sensing Applications in 28nm CMOS TechnologyN. Delorme 1 , C. Le Blanc 1 , A. Dezzani 1 , M. Bely 1 , A. Ferret 1 ,S. Laminette 1 , J. Roudier 1 , E. Colinet 21Asygn, Grenoble, France; 2 Apix Analytics, Grenoble, France16.6 A Double-Side CMOS-CNT Biosensor Array with Padless 3:45 PMDS Structure for Simple Bare-Die Measurements in a MedicalEnvironmentJ. Ahn 1 , J. Lim 1 , S-H. Kim 1 , J-Y. Yun 1 , C. Kim 1 , S-H. Hong 2 ,M-J. Lee 3 , Y. Park 11Seoul National University, Seoul, Korea2Kyung Hee University, Yongin, Korea3Chonnam National University, Gwangju, Korea16.7 A 20V 8.4W 20MHz Four-Phase GaN DC-DC Converter with 4:15 PMFully On-Chip Dual-SR Bootstrapped GaN FET Driver Achieving4ns Constant Propagation Delay and 1ns Switching Rise TimeM. K. Song 1 , L. Chen 1 , J. Sankman 1 , S. Terry 2 , D. Ma 11University of Texas, Dallas, TX; 2 Texas Instruments, Dallas, TX16.8 1GHz GaN-MMIC Monolithically Integrated MEMS-Based Oscillators 4:45 PMB. W. Bahr, L. C. Popa, D. WeinsteinMassachusetts Institute of Technology, Cambridge, MA16.9 A 128kb 4b/cell Nonvolatile Memory with Crystalline In-Ga-Zn 5:00 PMOxide FET Using V t Cancel Write MethodT. Matsuzaki 1 , T. Onuki 1 , S. Nagatsuka 1 , H. Inoue 1 , T. Ishizu 1 , Y. Ieda 1 ,N. Yamade 1 , H. Miyairi 1 , M. Sakakura 1 , T. Atsumi 1 , Y. Shionoiri 1 , K. Kato 1 ,T. Okuda 1 , Y. Yamamoto 1 , M. Fujita 2 , J. Koyama 1 , S. Yamazaki 11Semiconductor Energy Laboratory, Kanagawa, Japan2University of Tokyo, Tokyo, JapanConclusion5:15 PM30