ISSCC2015AdvanceProgram

SESSION 17Wednesday February 25 th , 8:30 AMEmbedded Memory and DRAM I/OSession Chair: Leland Chang, IBM T.J. Watson, Yorktown Heights, NYAssociate Chair: Takefumi Yoshikawa, Panasonic, Nagaokakyo, Japan17.1 A 0.6V 1.5GHz 84Mb SRAM Design in 14nm 8:30 AMFinFET CMOS TechnologyE. Karl, Z. Guo, J. W. Conary, J. L. Miller, Y-G. Ng, S. Nalam,D. Kim, J. Keane, U. Bhattacharya, K. ZhangIntel, Hillsboro, OR17.2 A 64kb 16nm Asynchronous Disturb Current Free 2-Port 9:00 AMSRAM with PMOS Pass-Gates for FinFET TechnologiesH. Fujiwara, L-W. Wang, Y-H. Chen, K-C. Lin, D. Sun, S-R. Wu,J-J. Liaw, C-Y. Lin, M-C. Chiang, H-J. Liao, S-Y. Wu, J. ChangTSMC, Hsinchu, Taiwan17.3 A 28nm 256kb 6T-SRAM with 280mV Improvement in V MIN 9:30 AMUsing a Dual-Split-Control Assist SchemeM-F. Chang 1 , C-F. Chen 1 , T-H. Chang 1 , C-C. Shuai 1 , Y-Y. Wang 1 ,H. Yamauchi 21National Tsing Hua University, Hsinchu, Taiwan2Fukuoka Institute of Technology, Fukuoka, JapanBreak10:00 AM17.4 A 14nm 1.1Mb Embedded DRAM Macro with 1ns Access 10:15 AMG. Fredeman 1 , D. Plass 1 , A. Mathews 2 , K. Reyer 1 , T. Knips 1 ,T. Miller 1 , E. Gerhard 3 , D. Kannambadi 1 , C. Paone 3 , D. Lee 1 ,D. Rainey 3 , M. Sperling 1 , M. Whalen 1 , S. Burns 41IBM, Poughkeepsie, NY2IBM, Austin, TX3IBM, Rochester, MN4IBM, Williston, VT17.5 A 3T1R Nonvolatile TCAM Using MLC ReRAM with Sub-1ns 10:45 AMSearch TimeM-F. Chang 1 , C-C. Lin 1 , A. Lee 1 , C-C. Kuo 2 , G-H. Yang 3 , H-J. Tsai 3 ,T-F. Chen 3 , S-S. Sheu 2 , P-L. Tseng 2 , H-Y. Lee 2 , T-K. Ku 21National Tsing Hua University, Hsinchu, Taiwan2ITRI, Hsinchu, Taiwan3National Chiao Tung University, Hsinchu, Taiwan17.6 1V 10Gb/s/pin Single-Ended Transceiver with Controllable 11:15 AMActive-Inductor-Based Driver and Adaptively CalibratedCascade-DFE for Post-LPDDR4 InterfacesJ. Song 1 , H-W. Lee 2 , J. Kim 1 , S. Hwang 1 , C. Kim 11Korea University, Seoul, Korea2Hynix Semiconductor, Icheon, Korea17.7 A Digital DLL with Hybrid DCC Using 2-Step Duty Error 11:45 AMExtraction and 180° Phase Aligner for 2.67Gb/s/pin 16Gb4-H Stack DDR4 SDRAM with TSVsW-J. Yun, I. Song, H. Jeoung, H. Choi, S-H. Lee, J-B. Kim,C-W. Kim, J-H. Choi, S-J. Jang, J. S. ChoiSamsung Electronics, Hwaseong, KoreaConclusion12:15 PM35