Hartmut S. Leipner

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Electron mobility and dislocation density Thickness of graded layer (µm) hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects Relaxed Si 1 − x Ge x , x = 0.3 Graded Si 1 − y Ge y , y = 0…0.3 Si Substrate Effect of the grading rate in the buffer on the density of threading dislocations and the electron mobility measured at 0.4 K. The dotted line is an extrapolation showing that the mobility is not limited by the dislocations once their density is below 10 7 cm −2 (thickness of graded layer > 0.5 µm). [Ismail 1996] 10
Diode characteristics and dislocations Reverse current (A) Reverse bias I–U characteristics for InP photodiodes containing different dislocation densities (given in cm −2 ) [Beam et al. 1992] hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects Bias (V) 11
Page 1 and 2: Hartmut S. Leipner: Structure of im
Page 3 and 4: Transistor as invented by Bardeen a
Page 5 and 6: hsl 2007 - Structure of imperfect m
Page 7 and 8: The field-effect transistor (FET) S
Page 9: μ n a Scattering at dislocations M
Page 13 and 14: Charged-dislocation model Model of
Page 15 and 16: Defects in GaAs field-effect transi
Page 17 and 18: Precipitate density (cm −3 ) (a)
Page 19 and 20: Active zone Radiation hsl 2007 - St
Page 21 and 22: Influence of dislocations on device
Page 23 and 24: Formation of dark-line defects EL E
Page 25 and 26: Dark-line defects and dislocation m
Page 27: Dislocation climb in the active lay
Page 30: Recombination enhanced dislocation
Page 33: References J. C. Kilby in: Handbook

Hartmut S. Leipner

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