Hartmut S. Leipner

Recombination enhanced dislocation glide
v (m/s)
I
n-type GaAs
τ = 26 MN m
with/without irradiation
−2
α
β
I = 2.6 A m −2
1000/T (K −1 )
I = 0.26 A m
I
−2
υ = υ0τ m exp
hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects
�
− Q
kBT
Temperature dependence of the
thermal and recombination-enhanced
dislocation velocity υ of polar 60° α
and β dislocations in GaAs
[Maeda, Takeuchi 1983]
(Q activation energy in the dark, I beam current density, ΔE reduction in the activation energy
by the electron beam, τ stress, m stress exponent, υ 0 and η prefactors)
�
� �
Q − !E
+ ηI exp −
kBT
30