Hartmut S. Leipner
Hartmut S. Leipner
Hartmut S. Leipner
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Dislocations in a GaAs LED<br />
(a) EBIC<br />
CL<br />
(b)<br />
1<br />
Dislocations in a GaAs light-emitting diode in EBIC (a) and cathodoluminescence (b)<br />
images. Note the vanishing contrast in (b) for the dislocations 1 to 3.<br />
[Schreiber et al. 1984]<br />
hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects<br />
2<br />
3<br />
EBIC – electron beam induced current<br />
1<br />
2<br />
3<br />
25 µm<br />
24