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Hartmut S. Leipner

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Dark-line defects and dislocation motion<br />

〈100〉<br />

10 µm<br />

EL<br />

Dark-line defects of a GaAlAs laser diode in the electroluminescence distribution<br />

and in a transmission electron microscope image. B denotes a threading<br />

dislocation and A the formation of a dislocation dipole in a 〈100〉 direction. g is the<br />

diffraction vector.<br />

[Hutchinson, Dobson 1980]<br />

hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects<br />

TEM<br />

25

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