Hartmut S. Leipner

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Dislocations at the p–n junction ♦ Dislocations as electrically active defects cause a shortening of the junction ♦ Transport of minority carriers under reverse bias affected ♦ Energy levels of dislocations (recombination centers): source of electrical noise ♦ Dopant precipitation at dislocations: local field enhancement under reverse bias, drop in reverse breakdown voltage ♦ Microplasma (high electron–hole density) formation hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects 12
Charged-dislocation model Model of Read (1957): The line charge of the dislocation is screened by a cylindrical space charge region, i. e. in an n-type semiconductor a negative dislocation is surrounded by positively charged donors. Radius of the Read cylinder: hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects + - + + + - - - - + - + + - - - - + + + + (Q charge per unit length) - + - Captured majority carriers Smearing out of the screening cloud for T > 0 13
Page 1 and 2: Hartmut S. Leipner: Structure of im
Page 3 and 4: Transistor as invented by Bardeen a
Page 5 and 6: hsl 2007 - Structure of imperfect m
Page 7 and 8: The field-effect transistor (FET) S
Page 9 and 10: μ n a Scattering at dislocations M
Page 11: Diode characteristics and dislocati
Page 15 and 16: Defects in GaAs field-effect transi
Page 17 and 18: Precipitate density (cm −3 ) (a)
Page 19 and 20: Active zone Radiation hsl 2007 - St
Page 21 and 22: Influence of dislocations on device
Page 23 and 24: Formation of dark-line defects EL E
Page 25 and 26: Dark-line defects and dislocation m
Page 27: Dislocation climb in the active lay
Page 30: Recombination enhanced dislocation
Page 33: References J. C. Kilby in: Handbook

Hartmut S. Leipner

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