Hartmut S. Leipner

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Top surface Double heterostructure GaN Substrate–film interface Al 2 O 3 hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects GaN laser diode TEM Nichia blue laser diode consisting of a stack of AlGaN, GaN, and InGaN layers. The SiO 2 islands are stoppers for threading dislocations. 1 µm TEM cross-section image of the layer containing threading dislocations [Lester et al. 1995] 20
Influence of dislocations on device efficiency Quantum efficiency 1.0 0.8 0.6 0.4 0.2 GaAs 10 4 10 5 hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects GaAlAs GaP GaAsP 10 6 10 7 10 8 Dislocation density (cm –2 ) GaN 10 9 Light output as a function of the dislocation density in the active region for various laser diodes according to Lester et al. (1995) and Sugahara et al. (1998) 21
Page 1 and 2: Hartmut S. Leipner: Structure of im
Page 3 and 4: Transistor as invented by Bardeen a
Page 5 and 6: hsl 2007 - Structure of imperfect m
Page 7 and 8: The field-effect transistor (FET) S
Page 9 and 10: μ n a Scattering at dislocations M
Page 11 and 12: Diode characteristics and dislocati
Page 13 and 14: Charged-dislocation model Model of
Page 15 and 16: Defects in GaAs field-effect transi
Page 17 and 18: Precipitate density (cm −3 ) (a)
Page 19: Active zone Radiation hsl 2007 - St
Page 23 and 24: Formation of dark-line defects EL E
Page 25 and 26: Dark-line defects and dislocation m
Page 27: Dislocation climb in the active lay
Page 30: Recombination enhanced dislocation
Page 33: References J. C. Kilby in: Handbook

Hartmut S. Leipner

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