Hartmut S. Leipner
Hartmut S. Leipner
Hartmut S. Leipner
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Influence of dislocations on device efficiency<br />
Quantum efficiency<br />
1.0<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
GaAs<br />
10 4<br />
10 5<br />
hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects<br />
GaAlAs GaP GaAsP<br />
10 6<br />
10 7<br />
10 8<br />
Dislocation density (cm –2 )<br />
GaN<br />
10 9<br />
Light output as a function of the dislocation density in the active region for various<br />
laser diodes according to Lester et al. (1995) and Sugahara et al. (1998)<br />
21
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