Tesis previa a la obtención del -titulo de Ingeniero Electrónico en la ...
Tesis previa a la obtención del -titulo de Ingeniero Electrónico en la ...
Tesis previa a la obtención del -titulo de Ingeniero Electrónico en la ...
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TYPES TIP120. TIP1Z1. TIP122<br />
N-P-N DARÜNGTON-CONNECTED SILICON POWER TRANSISTORS<br />
electrícal characteristics at 25°C case temperature<br />
PARAMETER<br />
Collecior-Emirter<br />
VIBRICEO Bref)kdovvn voheoe<br />
'CEO Collfcctor CuioH Curr<strong>en</strong>t<br />
'CBO CoIlecioT CutDfí Curr<strong>en</strong>t<br />
TESTCONDITIDNS<br />
lc-= 30 mA, IB = 0. See Note 6<br />
Vcr-30V. IB E 0<br />
VCE1"10^'. 'BH°<br />
VCE-50V, IB«0<br />
VCB-BOV, IE-O<br />
VCB = BOV. IE-D<br />
VCB « 100 V, l£ = 0<br />
lPRn Emine. Cutofl Curr<strong>en</strong>t |VSB = 5V. lc= 0<br />
Sialic rorward Curr<strong>en</strong>t<br />
hFE TransierRfliio<br />
VCE " 3 v- 'Cc °-5 A<br />
VCE"3 V. lc=3A<br />
VRF Base-Eminer Voltage | VC£ - 3 V. IC c 3 A.<br />
CollecTOf • £ m i ne r<br />
vCE(sat) SalurB,¡on Voltaoe<br />
IB •= 12mA, \c" 3A<br />
!B = 20mA, Ic'SA<br />
Se* Notes 6 and 7<br />
NOTES: 6. The» p/irumeleri mun be measured uiirtp pulsr Tech ñiques, lw - 3OO fit, duiy cyclr<br />
TIP120<br />
WN' MAX<br />
1DOO<br />
10OO<br />
60<br />
0.5<br />
2.5<br />
2<br />
4<br />
TIP121 T1P122<br />
MIN MAX|MIN MAX<br />
80 100<br />
1<br />
0.5 |<br />
tr*<br />
0.2<br />
1<br />
0.5<br />
0.2 |<br />
tro,<br />
1 0.2<br />
2<br />
looo<br />
2|<br />
ITOOO<br />
T~^T<br />
looo [IODO<br />
2.5 | 2.5<br />
*l 2|<br />
4|<br />
7. Tfieie pjimmBieri srt moBsurud «iin VDltaoe-wnsínp contad! repárale trotn The curr<strong>en</strong>t-carryinp con<strong>la</strong>cli md Incaled whhin 0.1 Ji<br />
Inch tfom ihe <strong>de</strong>vice body.<br />
s\vltching characteristics at 25°C case temperature<br />
PARAMETER<br />
ion Turn-OnTime<br />
IQJ^ Turn-Ofí i ime<br />
jf<br />
ADJUST FDR ^<br />
-„<br />
V^ • X V AT Tjl<br />
1NPI/7 MOWITOR<br />
TESTCOND1TIDNS1<br />
lC"3A. 'BhJcl2mA. 'B(2l --12 mA,<br />
vBE(oH) " -5 V, RL « 10 fí, See Figure 1<br />
PARAMETER MEASUREMENT INFORMATION<br />
TEST CIRCUIT<br />
! L- - .-.. 1<br />
i_<br />
HBB?-560lí<br />
— VBB2 - S V<br />
NOTES: A. Vp<strong>en</strong> i» » —3D-V pulte (írom O V) inio • SO íí irrminatiorí.<br />
i<br />
_]<br />
1»F<br />
— \(—<br />
l\<br />
— Vcc • 30 V<br />
OUTPUT -<br />
TYP<br />
1.5<br />
8.5<br />
VOLTAGE VYAVEFORMS<br />
B. Thp Vp<strong>en</strong> wovHorm U lupplii-d by B [mneraior wnh tne lotlowmp churBCiermici: if < 15 ni, t{ < 15 ni, 2OU1 - 50 íl, t^<br />
dury cyclr < 2H.<br />
C. WBvelorim r>'t motiiiDtwd or> <strong>en</strong> oieilloicop*- «/iih ihs íollowinp chnracietmici: i, «= 15 ni. R,n ^ 10 Mfl. Cift
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