Tesis previa a la obtención del -titulo de Ingeniero Electrónico en la ...

¡TYPES 2N1047 THRU 2N1050,2N1047A THRU 2N1050A,
:2N1047B THRU 2N1050B
'N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANS1STORS
el tétrica I characterístícs at 25°C case temperature (unless otherwís« noted)
PARAMETER
Calle elor-Emiíter
YI«K*° Sreakdown Yoltoge
* 'cío Colletlor CutoH Curren!
"ICEV Colletlor CutoH Curren!
*Ít,0 Emirier CutoH Curren!
Stotic Forwnrd
re Curren! Transfer Raíío
*Vt Basí-Emifter Yoftoge
, Collectof-Emirter
YCHMI Soluralíon Yollose
TEST CONDITIONS
|c = 30mA, 1. — 0,
Sec Note 5
Vc. = 3QY, IE = 0
Ve. = 30 Y, I£ = 0,
Tc = i5o'e
YCE = SOY, Y* = -UY
Yc£=12QV, V«; = _].5Y
Vu = 6 V, te = 0
YCE= 10 Y, le- 500 mA,
See Motes 5 and fi
YC£= 10 Y, lc = 500mA,
TC = -55°C, Sec Noreí 5 and 6
YCE= 10 V, [c = 500mA,
See Notei 5 and f>
1, = IDOmA, ¡c = 500 mA,
See Notes 5 ond 6
2NI047 2N1048 2N1049 | 2N105Q
MIN MAX |MIN MAX|M1N WjUCJMÍN MAX
SO
15
350
250
250
U 36
E
fi
7.5
120
15
350
250
250
12 36
'electrical characterlstics at 25°C case íemperature (unless ofherwíse noted)
PARAMETER
Calle ctor-Emirler
YfKtcEO EreoVdown Yoltnge
{^to Collector Cutofí Current
ICEY Collector Cutoff Curren!
UPO Emitter CutoH Current
Emirter-Bose
'E«l(i! floating Potentíal
Staíit Fonvarri Current
h(í Trnnsfer Rptio
VK Base-Emiíter Yoitoge
ColIetíor-EmiHer
VcE|»t| Saturation Yoltogt
Common-Emiííer
Iw- Beto-CutoH Frequency
10TES: I. TWn ¡«i«m.|.fi «int
1, Tbn* patim*\*rí tu m
•InJImn JEDEC r*fHi«-i Jc«irjl") I«n(*ttl,
75
120
15
15
350
350
250
250
250
0.5
12 36
8
75
6
7J
80
15
15
350
350
250
250
250
0.5
30 90
20
75
6
7-5
120
15
350
250
250
30 ?0
20
fi
7.5
2N1050A
M!N MAX
120
15
15
350
350
250
250
250
Qj
30 90
20
75
fi
7.5
UNIT
Y
l¿
M
M
Y
Y
UNIT
Y
P*
^
M
Y
Y
Y
Uü