EpiTT / EpiCurve®TT LED-based for CCS reactor - Laytec
EpiTT / EpiCurve®TT LED-based for CCS reactor - Laytec
EpiTT / EpiCurve®TT LED-based for CCS reactor - Laytec
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Reflectance<br />
<strong>EpiTT</strong> 488<br />
0.6<br />
0.5<br />
0.4<br />
0.3<br />
0.2<br />
0.1<br />
• damping<br />
• high sensitivity<br />
<strong>for</strong> thin layers<br />
0.0<br />
100 200 300 400 500 600 700 800 900<br />
time / s<br />
Example:<br />
AlGaN/AlN/Si,<br />
T=1060°C<br />
(calculated)<br />
n<br />
3,0<br />
< � g<br />
roughness<br />
measurement<br />
2,5<br />
Reflectance<br />
0.6<br />
0.5<br />
0.4<br />
0.3<br />
0.2<br />
0.1<br />
20% Al<br />
• small damping • no damping<br />
0.0<br />
100 200 300 400 500 600 700 800 900<br />
time / s<br />
> ~ � g<br />
composition<br />
sensitivity<br />
10% Al<br />
AlGaN<br />
T wafer = 1060°C<br />
>> � g<br />
best <strong>for</strong> growth rate<br />
20% Al<br />
10% Al<br />
2,0<br />
200 300 400<br />
Eg 500 600 700<br />
wavelength (nm)<br />
800 900<br />
0,0<br />
1000<br />
wavelength (nm)<br />
0.0<br />
100 200 300 400 500 600 700 800 900<br />
2 June 2008 Recent product improvements<br />
19<br />
Reflectance<br />
0.6<br />
0.5<br />
0.4<br />
0.3<br />
0.2<br />
0.1<br />
1,0<br />
0,9<br />
0,8<br />
0,7<br />
0,6<br />
0,5<br />
0,4<br />
0,3<br />
0,2<br />
0,1<br />
k<br />
time / s
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