EpiTT / EpiCurve®TT LED-based for CCS reactor - Laytec

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EpiTT / EpiCurve ® in HVPE High time resolution mode for HVPE � higher data acquisition rate by using several points per revolution � time resolution increases with number of points � wobble will be compensated by wafer selective reflectance calibration � all data are displayed in one dataset for analysis example: 10 "virtual wafers" per revolution 2 June 2008 Recent product improvements 26
EpiTT / EpiCurve ® in HVPE High time resolution mode for HVPE example: growth rate of 20 µm/h can be used for: • single wafer systems • with rotation trigger • for low wobble works up to a growth rate of 100 µm/h 2 June 2008 Recent product improvements 27
Page 1 and 2: Recent product improvements Dr. Kol
Page 3 and 4: EpiTT - experimental set-up EpiTT c
Page 5 and 6: EpiTT EpiTT - status until last mon
Page 7 and 8: Principle of pyrometry How does Pyr
Page 9 and 10: EpiTT EpiTT - status until last mon
Page 11 and 12: EpTT on 6x2“ CCS reactor GaN / Sa
Page 13 and 14: EpTT on 6x2“ CCS reactor EpiTT- L
Page 15 and 16: EpTT on 6x2“ CCS reactor GaN / Sa
Page 17 and 18: Outline Recent product improvements
Page 19 and 20: Reflectance EpiTT 488 0.6 0.5 0.4 0
Page 21 and 22: EpiTT 488 Example: AlInGaP optimum
Page 23 and 24: EpiTT 488 UV-LED structure: simulat
Page 25: EpiTT / EpiCurve ® in HVPE Challen
Page 29 and 30: EpiCurve ® TT in HVPE Special EpiC
Page 31 and 32: EpiTT / EpiCurve ® in HVPE Challen
Page 33 and 34: EpiCurve ® TT EpiCurve ® TT stand
Page 35 and 36: New EpiCurve ® option Curve only s
Page 37 and 38: Outline Summary • EpiTT in CCS re

EpiTT / EpiCurve®TT LED-based for CCS reactor - Laytec

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