EpiTT / EpiCurve®TT LED-based for CCS reactor - Laytec

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EpiTT 488 Example: AlInGaP � = 488nm � > 700nm � = 405nm only growth rate accessable growth rate and composition and morphology accessable only morphology accessable 2 June 2008 Recent product improvements 20
EpiTT 488 Example: AlInGaP optimum composition sensitivity around �=500nm EpiNet software inlcudes high temperature n,k database of AlGaInP for growth analysis M. Zorn et al. / Journal of Crystal Growth 287 (2006) 637–641 M. Zorn et al. / Journal of Crystal Growth 298 (2007) 23–27 2 June 2008 Recent product improvements 21
Page 1 and 2: Recent product improvements Dr. Kol
Page 3 and 4: EpiTT - experimental set-up EpiTT c
Page 5 and 6: EpiTT EpiTT - status until last mon
Page 7 and 8: Principle of pyrometry How does Pyr
Page 9 and 10: EpiTT EpiTT - status until last mon
Page 11 and 12: EpTT on 6x2“ CCS reactor GaN / Sa
Page 13 and 14: EpTT on 6x2“ CCS reactor EpiTT- L
Page 15 and 16: EpTT on 6x2“ CCS reactor GaN / Sa
Page 17 and 18: Outline Recent product improvements
Page 19: Reflectance EpiTT 488 0.6 0.5 0.4 0
Page 23 and 24: EpiTT 488 UV-LED structure: simulat
Page 25 and 26: EpiTT / EpiCurve ® in HVPE Challen
Page 27 and 28: EpiTT / EpiCurve ® in HVPE High ti
Page 29 and 30: EpiCurve ® TT in HVPE Special EpiC
Page 31 and 32: EpiTT / EpiCurve ® in HVPE Challen
Page 33 and 34: EpiCurve ® TT EpiCurve ® TT stand
Page 35 and 36: New EpiCurve ® option Curve only s
Page 37 and 38: Outline Summary • EpiTT in CCS re

EpiTT / EpiCurve®TT LED-based for CCS reactor - Laytec

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