Intel 45nm Process Overview - UCSB CAD & Test
Intel 45nm Process Overview - UCSB CAD & Test
Intel 45nm Process Overview - UCSB CAD & Test
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IOFF (nA/μm)<br />
NMOS I DSAT vs. I OFF<br />
1000<br />
100<br />
10<br />
1<br />
VDD = 1.0V<br />
90 nm<br />
90nm: Mistry 2004 VLSI<br />
65nm: Tyagi, 2005 IEDM<br />
65 nm<br />
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6<br />
IDSAT (mA/μm)<br />
1.36 mA/μm at I OFF = 100 nA/μm<br />
12% better than 65 nm<br />
160 nm<br />
20