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Exploration and Optimization of Tellurium‐Based Thermoelectrics

Exploration and Optimization of Tellurium‐Based Thermoelectrics

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scheme involving a homogeneous melt at 923 K, slow cooling between 873 <strong>and</strong> 773 K, followed by<br />

crushing <strong>and</strong> annealing at 798 K for ten days was only successful for the original ternary compound.<br />

Further optimization experiments on substitution samples, namely x = 0.1, 0.15, 0.20 in GaxSn1‐xBi6Te10,<br />

led to nearly pure phase results in a shaker furnace with a homogeneous melt at 923 K followed by four<br />

days at 843 K, then four days at 798 K. Those samples with fewer than 5% additional phases were also<br />

examined via EDX. All spots were found to contain all expected elements within acceptable elemental<br />

percentages, supporting the hypothesis <strong>of</strong> a uniform <strong>and</strong> homogeneous composition. In0.15SnBi5.85Te10,<br />

for example averaged 3, 6, 35, <strong>and</strong> 56 % respectively over eight crystals.<br />

9.3.2. Electronic Structure Calculations<br />

St<strong>and</strong>ard calculations with the LMTO s<strong>of</strong>tware were performed with SnBi6Te10 on select<br />

variations. Unlike the other compounds however, supercells were restricted by the fact that calculating<br />

with c = 102 Å was on the limit <strong>of</strong> the program’s capabilities. Attempts to double the unit cell along the<br />

a or b axis were nevertheless successful yielding calculations in 2/ or symmetries for even or odd<br />

number <strong>of</strong> triel atoms added respectively. Calculations were performed on a basis <strong>of</strong> 1000 evenly<br />

dispersed k‐points with Tr = Ga, In, <strong>and</strong> Tl. Selected calculation results are shown below:<br />

Figure 9.9 DOS calculations on SnBi 6Te 10 variants: (a) Ga 0.5Sn 0.5Bi 6Te 10, (b) Ga 0.5SnBi 5.5Te 10, (c) Tl 0.5SnBi 5.5Te 10, (d) TlSnBi 5Te 10.<br />

While similar in nature to SnBi6Te10, all quaternary compounds calculated show extra states at<br />

the top <strong>of</strong> the valence b<strong>and</strong> from the added triel elements while little changes occur in the conduction<br />

b<strong>and</strong>. Ga doping <strong>and</strong> substitution respectively show extra orbital states in the valence b<strong>and</strong> shrinking<br />

the b<strong>and</strong> gap <strong>and</strong> predicting a more p‐type material. Tl – the large extreme <strong>of</strong> the triel elements –<br />

shows the extra states occurring inside the b<strong>and</strong> gap, displaying increasing breadth as the Tl content<br />

increases. This again implies the added impurity states for the heavier triels appear broad compared to<br />

110

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