development of micro-pattern gaseous detectors – gem - LMU
development of micro-pattern gaseous detectors – gem - LMU
development of micro-pattern gaseous detectors – gem - LMU
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5.3. Optimized Efficiencies 61<br />
Cathode<br />
GEM 3<br />
GEM 2<br />
GEM 1<br />
readout<br />
structure<br />
E drift<br />
E trans2<br />
E trans1<br />
E ind<br />
U GEM 3<br />
U GEM 2<br />
U GEM 1<br />
Figure 5.5: The triple GEM detector and its different<br />
field regions (repetition).<br />
corr<br />
∈<br />
1<br />
0.95<br />
0.9<br />
0.85<br />
0.8<br />
0.75<br />
0.7<br />
0.65<br />
0.6<br />
0.55<br />
Δ U = 330 V<br />
GEM3<br />
Δ U = 290 V<br />
GEM2<br />
Δ U = 320 V<br />
GEM1<br />
EffGEM<br />
vs Etrans1,2<br />
cm<br />
kV<br />
E = 1.00<br />
drift<br />
cm<br />
kV<br />
E = 1.25<br />
drift<br />
cm<br />
kV<br />
Edrift<br />
= 1.50<br />
Eind<br />
= Etrans1,2<br />
0.5<br />
1 1.2 1.4 1.6 1.8 2 2.2<br />
Etrans1,2<br />
[kV/cm]<br />
Figure 5.7: Efficiency dependence <strong>of</strong> Etrans1,2 =<br />
Eind and three different Edri ft fields.<br />
corr<br />
∈<br />
1<br />
0.9<br />
0.8<br />
0.7<br />
0.6<br />
0.5<br />
0.4<br />
0.3<br />
0.2<br />
0.1<br />
Δ U = 350 V<br />
GEM3<br />
Δ U = 290 V<br />
GEM2<br />
Δ U = 330 V<br />
GEM1<br />
EffGEM<br />
vs Etrans1,2<br />
cm V<br />
Edrift<br />
= 1.50<br />
Eind<br />
= Etrans1,2<br />
0<br />
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2<br />
Etrans1,2<br />
[kV/cm]<br />
Figure 5.6: Efficiency scan for Etrans1,2 = Eind.<br />
The drift field is constant at Edri ft = 1.50 kV/cm<br />
corr<br />
∈<br />
1<br />
0.95<br />
0.9<br />
0.85<br />
0.8<br />
0.75<br />
0.7<br />
0.65<br />
0.6<br />
0.55<br />
Δ U = 330 V<br />
GEM3<br />
Δ U = 290 V<br />
GEM2<br />
Δ U = 320 V<br />
GEM1<br />
EffGEM<br />
vs Edrift<br />
cm<br />
kV<br />
E = E = 1.30<br />
trans1,2 ind<br />
cm<br />
kV<br />
E = E = 1.70<br />
trans1,2 ind<br />
cm<br />
kV<br />
Etrans1,2<br />
= Eind<br />
= 2.00<br />
0.5<br />
0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7<br />
Edrift<br />
[kV/cm]<br />
Figure 5.8: Efficiency dependence <strong>of</strong> Edri ft for<br />
three different Etrans1,2 = Eind fields.<br />
breakdown voltage limit ∆U limit<br />
GEM ≥ 360 V.<br />
Additional to this changing, the preamplifier CATSA82 is replaced by an home-made ELab1 preamplifier since it provides higher gains and faster rise time.<br />
Testing the temperature influence could be realized by installing the triple GEM in an insulated box<br />
packed with cooling elements. Herefore it was necessary to insulate the HV supplies and all other<br />
electronic components against moisture for safety reasons. This lead to a worse noise performance in<br />
comparison to the normal setup which could not be eliminated and was accommodated with higher<br />
discrimination thresholds.<br />
1 Electronics Laboratory <strong>of</strong> the <strong>LMU</strong> Munich