PHYS01200804001 Sohrab Abbas - Homi Bhabha National Institute
PHYS01200804001 Sohrab Abbas - Homi Bhabha National Institute
PHYS01200804001 Sohrab Abbas - Homi Bhabha National Institute
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The refraction corrections (cf.. Eq.(90)) in b c of – 6.5 * 10 -6 for Si{111}, slightly exceeds the<br />
proposed precision in magnitude (cf. Table 3), underscoring the importance of refraction effects.<br />
Therefore, when such ultrahigh precision is achieved, it becomes mandatory to account for neutron<br />
refraction at the ambient-sample interfaces and use the exact formulas for the Φ and b c respectively<br />
(cf. Eqs.(88-89)).<br />
Table 3: Comparison between various b c /b c contributions at Ioffe et al. [127] and our proposal<br />
for a Si sample.<br />
Ioffe et al. Source Proposed<br />
[111] [220]<br />
5.0 * 10 -5 Thickness: D 0.1 μm<br />
3.8 * 10-6<br />
(Precision grinding)<br />
9.0 * 10 -6 Phase: Ф = 0.3 o , typical 7.6 * 10 -7 1.2 * 10 -6<br />
2.2 * 10 -6 Air: ( N a b a /N)=9 * 10 -6 fm<br />
2.2 * 10 -6<br />
Eliminate: Vacuum expt<br />
1.1 * 10 -7 Rotation: δθ 0.01 o , typical 3.0*10 -8<br />
1.4 * 10 -7 Tilt: δγ 0.01 o , typical 1.5 * 10 -8<br />
3.7 * 10 -9 {Nd} Si = 6 * 10 6 cm -2 3.7 * 10 -9<br />
5.1 * 10 -5 Total 4.4 * 10 -6 4.5 * 10 -6<br />
Vacuum experiment 3.9 * 10 -6 4.0 * 10 -6<br />
101