PcB - High Frequency Electronics

High Frequency Products
NEW PRODUCTS
small housing that measures 3.0” x
2.5” x 0.85”.
Planar Monolithics Industries
pmi-rf.com
Power Amp
RFMD’s new RFPA2089 is a singlestage
InGaP HBT power amplifier
specifically designed for wireless
infrastructure applications. It offers
high-gain linear operation at a comparably
low DC power, making it
ideal for next generation radios
requiring high efficiency. Its external
matching allows for use across
various radio platforms. Features:
-60 dBc ACPR at 13 dBm WCDMA;
0.25W OP 1dB; Excellent Linearityto-DC
Power Ratio; 17.6 dB Gain at
2.65 GHz; Single-Supply 5V
Operation; Class 2 (2000V) HBM
ESD. Applications: Driver Amplifier
for Base Station Transceivers; PA
Stage for Commercial Wireless
Infrastructure; IF Amplifier; 2G,
3G, LTE Transceiver Applications.
RFMD
rfmd.com
Receiver
Spacek Labs’ model RE-15FISO is a
full-band receiver that downconverts
all of E-Band (60 to 90 GHz)
to an IF of 2 to 32 GHz. The LO is
derived from a mechanical tuned
Gunn oscillator that provides 15
mW @ 58 GHz. The bias for the
oscillator is +7 VDC @ 1 Amp typ. A
20 dB isolator is used between the
LO and mixer. The RF port is WR-12
and the IF port is K(F). The mixer
conversion loss is 7 dB typ, and 14
dB max. The loss includes an RF
image reject filter and full-band
isolator. This receiver can be used to
extend the frequency range of a
spectrum analyzer or perform measurements
in the E-band radio frequency
range.
Spacek Labs
spaceklabs.com
Filter
The LFCN-123+ Low Pass Filter
gives microwave communication
system designers the ability to
reject unwanted harmonics using
defined RF parameters. The multilayer
construction gives high
repeatability of performance. Small
wrap-around terminations minimize
variations in performance due
to parasitics. CoveringDC-12000
MHz, these units offer low insertion
loss and good rejection. Features:
Small size 3.2 mm x 1.6 mm; Pass
band (DC-12000 MHz); Low
Insertion Loss (2.0 dB typical);
Sharp rejection peaks close to stop
band.
Mini-Circuits
minicircuits.com
Transistor
Renesas Electronics and California
Eastern Laboratories are now shipping
a new SiGe:C High Frequency
Low Noise Transistor, the
NESG7030M04. It delivers Low
Noise Figure and High Gain with
low power consumption from UHF
to 6GHz. Fabricated with Renesas’
latest 100GHz fT SiGe:C process,
the NESG7030M04 is an ideal LNA
device for 5-6GHz Wi-Fi 802.11ac,
Electronic Toll Collection, and general
Short Range Wireless communications.
Typical specifications at
5.8GHz include Noise Figure of 0.75
dB and Associated Gain of 14 dB,
while requiring bias voltage and
current of only 2V and 5mA. The
transistor is available in Renesas’
RoHS-compliant flat-lead M04
(SOT-343F style) package.
CEL
cel.com
Amp
RFMW Ltd. announced design and
sales support for TriQuint
Semiconductor’s TQP7M9105, high
linearity amplifier with frequency
coverage from 50 MHz to 1.5 GHz.
This SOT-89 packaged amplifier
provides >19 dB of gain at 1 GHz
while drawing only 220 mA of current
from a 5V supply—one of the
best gain/current ratios available.
Output IP3 is 49 dBm making this
amplifier useful in applications
such as 3G/4G wireless infrastructure,
BTS transceivers, repeaters,
remote radio heads, femtocells, and
high power amplifier drivers.
RFMW
rfmw.com
Attenuator
Mini-Circuits’ new BW-S20W20+
precision fixed attenuator features:
DC to 18 GHz; precise attenuation;
excellent VSWR, 1.30:1 typ.; stainless
steel SMA male and female
connectors. Applications: matching;
August 2012 49