As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg
As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg
As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg
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8.1. Magnetotransport Measurements in <strong>MnSi</strong> epitaxial thin films 107<br />
% Magnetoresistance<br />
17.9 nm with c-Si cap<br />
0.8<br />
J || B(90 o )<br />
B(0 o __<br />
) || <strong>MnSi</strong>[211]<br />
0.6<br />
0.4<br />
0.2<br />
0.0<br />
-0.3 -0.2 -0.1 0.0 0.1 0.2 0.3<br />
Magnetic Field (T)<br />
% Magnetoresistance<br />
0.2<br />
0.1<br />
0.0<br />
-0.1<br />
-0.2<br />
17.1 nm with c-Si cap<br />
_<br />
J || B(-90 o ) || <strong>MnSi</strong>[211]<br />
B(0 o _<br />
) || <strong>MnSi</strong>[011]<br />
-0.3 -0.2 -0.1 0.0 0.1 0.2 0.3<br />
Magnetic Field(T)<br />
Fig. 8.6: Longitudinal magnetoresistance measurements for 17.1 <strong>and</strong> 17.9nm-nm thick <strong>MnSi</strong><br />
home-grown films, presented here as points of comparison for the 20-nm measurement. The<br />
percent change in magnetoresistance is calculated from the zero-field resistance value <strong>and</strong> both<br />
samples show very low magnetoresistance which is positive at very low fields. The current for<br />
both films are along <strong>MnSi</strong>[¯211] (B(0 ◦ ) ‖<strong>MnSi</strong>[01¯1]).<br />
From the magnetoresistance polar plots of both layers, it is pretty difficult to conclude<br />
the strength of the uniaxial anisotropy with the lack of sharp magnetization switches for<br />
materials such as (Ga,Mn)<strong>As</strong>. We might attribute this to the demagnetization corrections<br />
from the shape anisotropy of the Hall bar.[Ahar 98] Indeed, sample shape has been<br />
studied <strong>and</strong> observed to reduce <strong>and</strong> shift the transition fields. [Baue 12]<br />
Also as a test for the possibility of in-plane transport contributions of an out-of-plane<br />
field, magnetic fields of 0 to 200 mT was applied along <strong>MnSi</strong>[111] while varying the<br />
in-plane magnetic field. The plots are shown in Figure 8.8. For helical magnets, an applied<br />
in-plane field distorts the helix into a helicoidal structure until the magnetization<br />
structure breaks into isolated domains at saturation.[Karh 12] For our measurements, we<br />
do not reach this critical value H D in our applied fields. For an out-of-plane field, the<br />
helical structure is pulled into a conical state until the applied field is high enough to<br />
reach an induced ferromagnetic state. From measurements done on <strong>MnSi</strong> thin films, the<br />
helical-conical transition magnetic field is estimated to be around 180 mT for fields applied<br />
along <strong>MnSi</strong>[111].[Karh 11] Below a certain field, the helical structure re-orients to<br />
the easy axis.[Plum 81]<br />
Comparing the polar plots for the 0 mT <strong>and</strong> 200mT applied fields, it seems that there is a<br />
change in the low-field fluctuations at an out-of-plane applied field near 200 mT. (Figure<br />
8.8) However, as with Figure 8.7, this difference could possibly just arise from the demagnetization<br />
effects. This is supported by the plots with other out-of-plane magnetic field<br />
strengths where the observed evolution of the magnetic properties appear to be r<strong>and</strong>om