As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg

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44 3. Electric Control of Magnetization in Thin (Ga,Mn)As Layers
Chapter 4 Epitaxial lift-off of (Ga,Mn)As thin films Inorder toestablish processing steps forfurther implementation ofourgatingexperiments using other substrates, preliminary studies on the effect of the epitaxial lift-off process to the magnetic properties of (Ga,Mn)As thin films were performed. The possibility of using materials with higher dielectric constants for improved leakage current characteristics is highly attractive in continuing the exploration of results presented in the previous chapter, particularly through the metal-insulator transition. Effects on the magnetotransport behavior in lifted-off films are observed and discussed. Fig. 4.1: Basic steps of the ELO process. Step [1] shows the desired film grown on top of a sacrificial layer, such as AlAs. In Step [2], black wax (e.g. Apiezon) is put on top of the film for protection and support. Step [3] shows the free-standing film after the etchant (e.g. HF) completely eats away the sacrificial layer. Step [4] shows the new film on top of a new substrate with the supporting wax cleaned away. 45
Page 1 and 2: Characterization of Novel Magnetic
Page 3 and 4: Contents Zusammenfassung 4 Summary
Page 5 and 6: Zusammenfassung Um einerseits ein f
Page 7 and 8: Zusammenfassung 3 auf die anomale t
Page 9 and 10: Summary The study of magnetic phase
Page 11 and 12: Summary 7 bandstructure affecting t
Page 13 and 14: Chapter 1 Introduction Spin electro
Page 15 and 16: 11 states in the MnSi. Chapter 9 fi
Page 17 and 18: Chapter 2 Diluted Ferromagnetic Sem
Page 19 and 20: 2.1. Basic properties of (Ga,Mn)As
Page 21 and 22: 2.3. Electrical Control of Magnetiz
Page 23 and 24: 2.4. (Ga, Mn)As and the Metal-Insul
Page 25 and 26: 2.4. (Ga, Mn)As and the Metal-Insul
Page 27 and 28: 2.5. Summary 23 2.5 Summary A brief
Page 29 and 30: Chapter 3 Electric Control of Magne
Page 31 and 32: 3.2. Electrical control of magnetiz
Page 45 and 46: 3.3. Reproducible Conductance Fluct
Page 47: 3.4. Summary 43 changed significant
Page 51 and 52: 4.2. Test Barrier Material 47 Fig.
Page 53 and 54: 4.4. Magnetotransport in ELO-proces
Page 55 and 56: 4.4. Magnetotransport in ELO-proces
Page 57 and 58: 4.5. Electrical gating of ELO-proce
Page 59 and 60: Chapter 5 Basic properties of Ferro
Page 61 and 62: 5.1. Bulk properties of MnSi 57 (a)
Page 63 and 64: 5.2. Expitaxially-grown MnSi Thin F
Page 65 and 66: 5.2. Expitaxially-grown MnSi Thin F
Page 67 and 68: 5.3. Skyrmions, Chirality and Magne
Page 69 and 70: 5.3. Skyrmions, Chirality and Magne
Page 71 and 72: 5.4. Summary 67 tions. MnSi provide
Page 73 and 74: Chapter 6 Epitaxial Growth of MnSi
Page 75 and 76: 6.2. Material Characterization 71 F
Page 77 and 78: 6.2. Material Characterization 73 M
Page 79 and 80: 6.3. Device Fabrication 75 Fig. 6.5
Page 81 and 82: 6.4. Temperature-dependent measurem
Page 83 and 84: 6.5. Summary 79 expected for the he
Page 85 and 86: Chapter 7 Magnetotransport with H
Page 87 and 88: 7.1. Hall Measurements 83 0 J || [-
Page 89 and 90: 7.1. Hall Measurements 85 0.40 R xy
Page 91 and 92: 7.1. Hall Measurements 87 is two or
Page 93 and 94: 7.1. Hall Measurements 89 6 J || [1
Page 95 and 96: 7.1. Hall Measurements 91 0.02 0.00
Page 97 and 98: 7.1. Hall Measurements 93 0.100 -55
Page 99 and 100:
7.1. Hall Measurements 95 0.15 R xy
Page 101 and 102:
7.1. Hall Measurements 97 Magnetore
Page 103 and 104:
7.2. Summary 99 T c . The sign of t
Page 105 and 106:
Chapter 8 Magnetotransport with In-
Page 107 and 108:
8.1. Magnetotransport Measurements
Page 109 and 110:
Page 111 and 112:
Page 113 and 114:
Page 115 and 116:
Page 117 and 118:
Page 119 and 120:
8.2. Summary 115 8.2 Summary Low ma
Page 121 and 122:
Chapter 9 Conclusions & Outlook In
Page 123 and 124:
Appendix A Fabrication of Four-Term
Page 125 and 126:
A.2. Optimized final process 121 Fi
Page 127 and 128:
A.2. Optimized final process 123 95
Page 129 and 130:
Appendix B Epitaxial lift-off techn
Page 131 and 132:
127 Evap 2 Wire Rinse in water 1min
Page 133 and 134:
Bibliography [Abra 96] E. Abrahams
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131 [Edmo 03] K. Edmonds. Journal o
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133 [Ishi 77] Y. Ishikawa, G. Shira
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135 [Mudu 05] P. K. Muduli, K.-J. F
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137 [Rich 10] A. Richardella, P. Ro
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139 [Vila 07] L. Vila, R. Giraud, L
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Acknowledgements First ofall I woul
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