As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg

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64 5. Basic properties of Ferromagnet MnSi Fig. 5.8: HighpressuremeasurementsoftheHallresistivityshowlargetopological contributions to the Hall signal at elevated pressure. Reprinted from [Lee 09] Fig. 5.9: Schematic representation of the bcc spin crystal (BSC) magnetic structure from [Binz 06b]. (a) shows the structure with the black nodes indicating M = 0 with (b) showing the crosssection of(a)witharrowsdenotingin-planemagnetization. Image(c)showstheprobability distribution of BSC states. Reprinted from [Binz 06b]
5.3. Skyrmions, Chirality and Magnetotransport in MnSi 65 J H E (a) (b) Fig. 5.10: Magnetotransport signatures from the BSC spin structure. (a) corresponds to the bow-tie hysteresis/quadratic contribution on the Hall signal arising from the symmetry breaking from the chiral parameter. (b) shows the additional electric field contribution to the planar Hall voltage (J ‖ [1¯10]) arising from the symmetry of the spin crtsyal. Image reference: [Binz 07] is shown in Figure 5.9. [Binz 06b, Binz 06a] This phenomenological model was derived from diffraction results near the phase (Fermi to non-Fermi) transition at high pressures, which shows reorientation of the propagation vector from [111] to [110].[Pfle 04] This partial order is modeled as linear superposition of helices, forming a bcc-structure spin crystal.[Binz 06b] The spin structure is shown in Figure 5.9. In this model spin structure, a chirality-induced anomalous term is predicted to manifest in the Hall measurements, among other magnetotransport signatures.[Binz 07, Binz 08]Several magnetotransportsignatures have been predicted for the BSC state, shown in Figure 5.10.[Binz 07] These structures arise mainly from the chiral character of the BSC state.[Binz 08] The Hall contribution is a quadratic Hall term given by Equation 5.5. ρ H B eff = (ρ H + 1 √ 3 γSB)B, (5.5) where B C is the effective field including contributions from the BSC global time-reversal symmetry breaking order parameter S. The signal manifests as a bow-hysteresis in the Hall signal arising from the changing sign of S. With a current j running along [1¯10] with voltage drop measurement perpendicular to current direction, the BSC induces an
Page 1 and 2:
Characterization of Novel Magnetic
Page 3 and 4:
Contents Zusammenfassung 4 Summary
Page 5 and 6:
Zusammenfassung Um einerseits ein f
Page 7 and 8:
Zusammenfassung 3 auf die anomale t
Page 9 and 10:
Summary The study of magnetic phase
Page 11 and 12:
Summary 7 bandstructure affecting t
Page 13 and 14:
Chapter 1 Introduction Spin electro
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11 states in the MnSi. Chapter 9 fi
Page 17 and 18: Chapter 2 Diluted Ferromagnetic Sem
Page 19 and 20: 2.1. Basic properties of (Ga,Mn)As
Page 21 and 22: 2.3. Electrical Control of Magnetiz
Page 23 and 24: 2.4. (Ga, Mn)As and the Metal-Insul
Page 25 and 26: 2.4. (Ga, Mn)As and the Metal-Insul
Page 27 and 28: 2.5. Summary 23 2.5 Summary A brief
Page 29 and 30: Chapter 3 Electric Control of Magne
Page 31 and 32: 3.2. Electrical control of magnetiz
Page 45 and 46: 3.3. Reproducible Conductance Fluct
Page 47 and 48: 3.4. Summary 43 changed significant
Page 49 and 50: Chapter 4 Epitaxial lift-off of (Ga
Page 51 and 52: 4.2. Test Barrier Material 47 Fig.
Page 53 and 54: 4.4. Magnetotransport in ELO-proces
Page 55 and 56: 4.4. Magnetotransport in ELO-proces
Page 57 and 58: 4.5. Electrical gating of ELO-proce
Page 59 and 60: Chapter 5 Basic properties of Ferro
Page 61 and 62: 5.1. Bulk properties of MnSi 57 (a)
Page 63 and 64: 5.2. Expitaxially-grown MnSi Thin F
Page 65 and 66: 5.2. Expitaxially-grown MnSi Thin F
Page 67: 5.3. Skyrmions, Chirality and Magne
Page 71 and 72: 5.4. Summary 67 tions. MnSi provide
Page 73 and 74: Chapter 6 Epitaxial Growth of MnSi
Page 75 and 76: 6.2. Material Characterization 71 F
Page 77 and 78: 6.2. Material Characterization 73 M
Page 79 and 80: 6.3. Device Fabrication 75 Fig. 6.5
Page 81 and 82: 6.4. Temperature-dependent measurem
Page 83 and 84: 6.5. Summary 79 expected for the he
Page 85 and 86: Chapter 7 Magnetotransport with H
Page 87 and 88: 7.1. Hall Measurements 83 0 J || [-
Page 89 and 90: 7.1. Hall Measurements 85 0.40 R xy
Page 91 and 92: 7.1. Hall Measurements 87 is two or
Page 93 and 94: 7.1. Hall Measurements 89 6 J || [1
Page 95 and 96: 7.1. Hall Measurements 91 0.02 0.00
Page 97 and 98: 7.1. Hall Measurements 93 0.100 -55
Page 99 and 100: 7.1. Hall Measurements 95 0.15 R xy
Page 101 and 102: 7.1. Hall Measurements 97 Magnetore
Page 103 and 104: 7.2. Summary 99 T c . The sign of t
Page 105 and 106: Chapter 8 Magnetotransport with In-
Page 107 and 108: 8.1. Magnetotransport Measurements
Page 119 and 120:
8.2. Summary 115 8.2 Summary Low ma
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Chapter 9 Conclusions & Outlook In
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Appendix A Fabrication of Four-Term
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A.2. Optimized final process 121 Fi
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A.2. Optimized final process 123 95
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Appendix B Epitaxial lift-off techn
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127 Evap 2 Wire Rinse in water 1min
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Bibliography [Abra 96] E. Abrahams
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131 [Edmo 03] K. Edmonds. Journal o
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133 [Ishi 77] Y. Ishikawa, G. Shira
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135 [Mudu 05] P. K. Muduli, K.-J. F
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137 [Rich 10] A. Richardella, P. Ro
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139 [Vila 07] L. Vila, R. Giraud, L
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Acknowledgements First ofall I woul
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As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg

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