As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg

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126 B. Epitaxial lift-off technique HF Dip HF removal Cleaning that the etching channel (sacrificial layer) is exposed 1:20 HF:DI H 2 O for 8 - 10 hours (i.e. 4mmx4mm sample) Use cryostat bath set at 0 ◦ C for etchant cooling. Lift-off, Acetone at 50 ◦ C Check every two hours for side-curl If there is no curling of the wax at the side, take out he sample from HF bath and scrape off extra wax. from sides to ensure etch channel exposure One you see freely-floating film with wax: Remove from cryostat and HF bath Dip sample holder in least six beakers with DI H 2 O, 1 minute each (rinsing) Catch floating film with new substrate Dry in air for at least 24 hours Chemical removal of Apiezon wax with TCE After fully removing wax, gently rinse with Acetone and IPA. (no ultrasonic allowed at this point) Device Processing steps Bonding pads ECI-300 5000rpm for 40s, 2min at 80 ◦ C Align on top of lifted-off layer, exposure 7 seconds UV light (Karl-Suss MJB Mask Aligner) Develop: AZ-726, 22s Rinse in water 1min Evap 1 10nm Ti + 120nm Au Lift-off, Acetone 50 ◦ C Mesa ECI-300 5000rpm for 40s, 2min at 80 ◦ C Align on top of contacts, exposure 7 seconds UV light (Karl-Suss MJB Mask Aligner) Develop: AZ-726, 22s Rinse in water, 1min Dry etching CAIBE parameters: Cl 2 gas, 400V, 150W, 25 ◦ C Etch rates: Si: 70 nm/min, Ti: 25 nm/min Etch time: 3- 5 minutes Rinse in water for 10 minutes Resist removal: NEP at 80 ◦ C for several hours Backside contacts ARU-4040 5000rpm for 40s, 2min at 94 ◦ C Align on top of n-type substrate, exposure 14 seconds UV light (Karl-Suss MJB Mask Aligner) Develop: AR300-26 1:4, 1 min
127 Evap 2 Wire Rinse in water 1min 10nm Ti + 120nm Au Lift-off, Acetone 50 ◦ C Glue bonding with silver paste mixture Final baking at 130 ◦ C for 15 minutes
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Characterization of Novel Magnetic
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Contents Zusammenfassung 4 Summary
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Zusammenfassung Um einerseits ein f
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Zusammenfassung 3 auf die anomale t
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Summary The study of magnetic phase
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Summary 7 bandstructure affecting t
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Chapter 1 Introduction Spin electro
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11 states in the MnSi. Chapter 9 fi
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Chapter 2 Diluted Ferromagnetic Sem
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2.1. Basic properties of (Ga,Mn)As
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2.3. Electrical Control of Magnetiz
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2.4. (Ga, Mn)As and the Metal-Insul
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2.4. (Ga, Mn)As and the Metal-Insul
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2.5. Summary 23 2.5 Summary A brief
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Chapter 3 Electric Control of Magne
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3.2. Electrical control of magnetiz
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3.3. Reproducible Conductance Fluct
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3.4. Summary 43 changed significant
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Chapter 4 Epitaxial lift-off of (Ga
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4.2. Test Barrier Material 47 Fig.
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4.4. Magnetotransport in ELO-proces
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4.4. Magnetotransport in ELO-proces
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4.5. Electrical gating of ELO-proce
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Chapter 5 Basic properties of Ferro
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5.1. Bulk properties of MnSi 57 (a)
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5.2. Expitaxially-grown MnSi Thin F
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5.2. Expitaxially-grown MnSi Thin F
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5.3. Skyrmions, Chirality and Magne
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5.3. Skyrmions, Chirality and Magne
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5.4. Summary 67 tions. MnSi provide
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Chapter 6 Epitaxial Growth of MnSi
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6.2. Material Characterization 71 F
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6.2. Material Characterization 73 M
Page 79 and 80: 6.3. Device Fabrication 75 Fig. 6.5
Page 81 and 82: 6.4. Temperature-dependent measurem
Page 83 and 84: 6.5. Summary 79 expected for the he
Page 85 and 86: Chapter 7 Magnetotransport with H
Page 87 and 88: 7.1. Hall Measurements 83 0 J || [-
Page 89 and 90: 7.1. Hall Measurements 85 0.40 R xy
Page 91 and 92: 7.1. Hall Measurements 87 is two or
Page 93 and 94: 7.1. Hall Measurements 89 6 J || [1
Page 95 and 96: 7.1. Hall Measurements 91 0.02 0.00
Page 97 and 98: 7.1. Hall Measurements 93 0.100 -55
Page 99 and 100: 7.1. Hall Measurements 95 0.15 R xy
Page 101 and 102: 7.1. Hall Measurements 97 Magnetore
Page 103 and 104: 7.2. Summary 99 T c . The sign of t
Page 105 and 106: Chapter 8 Magnetotransport with In-
Page 107 and 108: 8.1. Magnetotransport Measurements
Page 119 and 120: 8.2. Summary 115 8.2 Summary Low ma
Page 121 and 122: Chapter 9 Conclusions & Outlook In
Page 123 and 124: Appendix A Fabrication of Four-Term
Page 125 and 126: A.2. Optimized final process 121 Fi
Page 127 and 128: A.2. Optimized final process 123 95
Page 129: Appendix B Epitaxial lift-off techn
Page 133 and 134: Bibliography [Abra 96] E. Abrahams
Page 135 and 136: 131 [Edmo 03] K. Edmonds. Journal o
Page 137 and 138: 133 [Ishi 77] Y. Ishikawa, G. Shira
Page 139 and 140: 135 [Mudu 05] P. K. Muduli, K.-J. F
Page 141 and 142: 137 [Rich 10] A. Richardella, P. Ro
Page 143 and 144: 139 [Vila 07] L. Vila, R. Giraud, L
Page 145: Acknowledgements First ofall I woul
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As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg

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