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As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg

As and Epitaxial-Growth MnSi Thin Films - OPUS Würzburg

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Chapter 5<br />

Basic properties of Ferromagnet<br />

<strong>MnSi</strong><br />

Recent developments in the study of non-collinear spin structures, particularly <strong>MnSi</strong>,<br />

have prompted the renewed interest in the study of these types of materials. They have<br />

recently been the subject of several exploratory transport studies focusing on their unusual<br />

magnetic behavior, existence of exotic magnetic states or spin structures ([Papp 09],<br />

[Mueh 09])<strong>and</strong>astestbedforexistingtheoriessuchasthoseontheoriginoftheanomalous<br />

Hall effect (AHE).[Naga 10] These developments have inspired the initial development of<br />

in-house <strong>MnSi</strong> thin film growth in our group. In this chapter, we describe the basic<br />

properties of the weak itinerant ferromagnet <strong>MnSi</strong> <strong>and</strong> state-of-the-art research on its<br />

magnetic properties, particularly on its exotic magnetic structure.<br />

5.1 Bulk properties of <strong>MnSi</strong><br />

Thought to be well-understood, interest in <strong>MnSi</strong> has grown in the recent years through<br />

the observation of new exciting electronic <strong>and</strong> magnetic properties, particularly non-<br />

Fermi liquid behavior under high pressure([Pfle 01]), presence of a Skyrmion lattice near<br />

the ordering temperature T ord ([Pfle 10a]) <strong>and</strong> ultra-low current densities for spin-torque<br />

applications using these exotic phases.([Joni 10], [Schu 12]) These interesting material<br />

spintronic properties of <strong>MnSi</strong> are tied to the complex magnetocrystalline structure of the<br />

material.([Ishi 77], [Naka 80], [Grig 06a])<br />

The weak itinerant ferromagnet <strong>MnSi</strong> is a cubic helimagnet with non-centrosymmetric<br />

B20 crystal structure belonging to space group P2 1 3 with distorted rock salt basis vectors<br />

(u,u,u),( 1 +u, 1 −u,−u),(−u, 1 +u, 1 −u) <strong>and</strong> 2 2 2 2 (1 −u,−u, 1 +u) for the right-h<strong>and</strong>ed<br />

2 2<br />

form with u Mn = 0.137 <strong>and</strong> u Si = -0.155. For a left-h<strong>and</strong>ed structure, u is replaced by<br />

1−u. The lattice constant is around 4.558 Å. The cubic crystalline structure is shown<br />

55

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