Requirements for Unity of Application - Japan Patent Office

[Example 70]
[Title of the Invention]
Heat absorbing substrate fabrication process and etching medium
[Claims]
1. A process of manufacturing heat absorbing substrate wherein a large number of holes can
be produced employing gas phase etching medium in equal proportion of O2, Ar and
CCl2F2, and exposing the medium to the substrate, the substrate is placed near the
sputterable component, and …effect sputtering, …and complete etching are conducted.
(See Figure 1)
2. A gas phase etching medium comprising equal proportion of O2, Ar and CCl2F2.
[Excerpt from Detail Description of the Invention and Drawing]
This invention concerns a highly efficient feat absorbing substrate, and includes
formation of extrusions and indentations on the surface of the heat absorbing substrate and the
etching medium used in this process. A specified matter of the gas phase etching medium is
used.
In the prior art, the formation of extrusions and indentations were produced chemically.
As such the process required post-process treatments and required multiple additional steps.
In this process of fabrication, no post-processing is required and the use of specific gas phase
etching medium produces better results.
Figure 1
[Explanation]
The related invention (Claim 2) is the gas phase etching medium by sputtering. It does
not correspond to the “equipment,” but it falls under “other products” directly used in working
the process for fabrication of the specified invention (Claim 1).
[Concerned Section]
Patent Law Section 37(iv)
117