Requirements for Unity of Application - Japan Patent Office

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[Example 23] [Title of the Invention] Manufacturing processes of silicon carbide powder for sintering silicon carbide sintered compact [Claims] 1. A process for manufacturing a silicon carbide powder for sintering, comprising the steps of decomposing an organ silicon high molecular compound, whose main key components are silicon and carbon, at a temperature between 1600℃ and 2200℃ in the inert gas atmosphere and obtaining a powder whose main component is β-SiC ; obtaining a power made from high-purity β-SiC treated with acids including a hydrofluoric acid after heating this powder to temperatures between 500℃ and 800℃ in the oxidative atmosphere. 2. A process for manufacturing silicon carbide sintered compact whose density is 2.60g/mg 3 or above wherein a powder is manufactured from high-purity β-Sic by the process for manufacturing as described in Claim 1; wherein the powder is sintered in the inert gas atmosphere after the powder is in the prescribed shape. [Excerpt of Detailed Description of the Invention] This invention is a process for obtaining silicon carbide powder made from fine high-purity sintering β-SiC and a process for manufacturing high-density silicon carbide sintered compact, which is made from the powder, with high mechanical strength. [Explanation] Though the technical fields of the specified invention (Claim 1) and the related invention (Claim 2) are respectively “manufacturing silicon carbide powder” and “manufacturing silicon carbide sintered compact”, as described in the Claims, that silicon carbide is applied to sintering. Therefore, the technical fields are technically and directly associated with each other and their industrial fields of application are the same. Furthermore, a process for manufacturing high-purity β -SiC powder, a new matter corresponding to the problem to be solved of the specified invention, is equivalent to the substantial part of the matter in the claim of the related invention, so the substantial parts of matters in the claims of the two inventions are the same. [Concerned Section] Patent Law Section 37(ii) 54
[Example 24] [Title of the Invention] Zeolite [Claims] 1. A zeolite comprising X-ray pattern of xxxx, whose formula is [M 2 O] 0-9 [Al 2 O 3 ] 0.1-3 [SiO 2 ] 100 [H 2 O] 0-35 wherein M in the formula is an alkali metal. 2. A zeolite, including the X-ray pattern of xxxx, whose formula is [M 2 O] 0-9 [Q + ] 1-50 [Al 2 O 3 ] 1 [SiO 2 ] 30-1000 [H 2 O] 0-2000 , wherein M in the formula is an alkali metal and Q is tetraalkylethylenediamine. [Excerpt of Detailed Description of the Invention] This invention introduces a new kind of zeolite, which is used as a catalyst for such reactions as catalytic cracking or hydrodesulfurization..… … A zeolite in this invention is synthesized by the hydrothermal crystallization process described later. Although the crystallized product synthesized by the hydrothermal crystallization process contains Q (tetraalkylethylenediamine), Q disappears if it is dehydrated and burned. [Explanation] It is recognized that a zeolite of the related invention (Claim 2) is mainly used as a raw material for a zeolite (a final substance) of the specified invention (Claim 1). Therefore the technical fields of both inventions are technically and directly associated with each other and their industrial fields of application are the same. In addition, because the X-ray patterns of both zeolite are the same, it is recognized that their structures of zeolite crystals composed of Si, Al and O are the same. Accordingly, the new fundamental structures of both substances are similar, and therefore the substantial parts of matters in the claims of both inventions are the same. [Concerned Section] Patent Law Section 37(ii) 55
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