Requirements for Unity of Application - Japan Patent Office

[Example 40]
[Title of the Invention]
MIS type semiconductor device and the semiconductor random access memory device
application
[Claims]
1. MIS type semiconductor device, comprising first MIS element (Q W11 ) formed on the
semiconductor substrate, utilizing either the drain (3) or the source (4) of the first MIS
element (Q W11 ) and the second MIS element (Q R11 ) formed above the first MIS element
(Q W11 ). (See Figure 1)
2. A semiconductor random access memory device with the characteristics of having the
matrix of memory cells (C11) that includes the first MIS element (Q W11 ), the drain (3) or the
source (4) of the first MIS element (Q W11 ) and the second MIS element (Q R11 ) formed
above the first MIS element (Q W11 ), gate input capacity information storage capacitor
(C S11 ) for the second MIS element (Q W11 ). In the matrix of the memory array, the drain of
the said first MIS element (Q W11 ) electrically connected to the drain of the second MIS
element (Q W11 ), … connecting so that the data line (D 1 ) orthogonally to sense (S 1 ) and
word (W 1 ) lines of the each memory cell of the array. (See Figure 2)
[Excerpt from Detail Description of the Invention and Drawings]
This invention concerns the MIS semiconductor device and a high-integrated random
access memory semiconductor device. This memory cell is composed of two MIS elements
forming specific circuit in the memory cell circuit and a capacitor in which the first MIS element
(Q W11 ) and the second MIS element (Q R11 ) formed above the former, further the either the
source or drain of the first MIS element (Q W11 ) is made function as the gate to the second MIS
element (Q R11 ) carrying a capacitor (C S11 ) thereby achieving a semiconductor random access
memory device which is simplified.
Figure 1 Figure 2
[Explanation]
The technical fields of the specified invention (Claim 1) and related invention (Claim 2) are
"MIS type semiconductor device" and "semiconductor random access memory device
application". Application of the art of the technical field of MIS type semiconductor device to the
technical field of semiconductor random access memory consisting of many circuit elements is
extremely appropriate. The technical fields of both inventions are related directly and
technically, therefore their industrial fields of application of both inventions are the same.
The semiconductor device that is the new matter corresponding to the problem to be solved
of the specified invention is substantial part of matters in the claim of the related invention.
Therefore the substantial parts of matters in the claims of the inventions are the same.
75