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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 2, FEBRUARY 2006 717<br />

<strong>Design</strong> <strong>Methodologies</strong> <strong>of</strong> <strong>LTCC</strong> <strong>B<strong>and</strong>pass</strong> <strong>Filters</strong>,<br />

<strong>Diplexer</strong>, <strong>and</strong> Triplexer With Transmission Zeros<br />

Ching-Wen Tang, Member, IEEE, <strong>and</strong> Sheng-Fu You<br />

Abstract—A new method for designing the multilayered filter,<br />

diplexer, <strong>and</strong> triplexer is proposed in this paper. The main structure<br />

<strong>of</strong> the multilayered filter is a parallel-coupled line connected<br />

with a capacitor. By properly controlling the coupling coefficient<br />

between the parallel-coupled line <strong>and</strong> the capacitor, the transmission<br />

zero will appear at the lower or higher passb<strong>and</strong>’s skirt. Moreover,<br />

such characteristics can be employed to design the diplexer as<br />

well for dual- or quad-b<strong>and</strong> portable telephones. In order to miniaturize<br />

the size <strong>of</strong> the circuit <strong>and</strong> to improve its performance, multilayered<br />

structure <strong>and</strong> the low-temperature co-fired ceramic technology<br />

are employed to design <strong>and</strong> fabricate the filter. Theoretical<br />

analysis <strong>and</strong> design procedures are also provided. Measurement results<br />

<strong>of</strong> fabricated examples are shown to match well with the electromagnetic<br />

simulation, which validate the proposed structure.<br />

Index Terms—<strong>B<strong>and</strong>pass</strong> filter, diplexer, low-temperature c<strong>of</strong>ired<br />

ceramic (<strong>LTCC</strong>).<br />

Fig. 1.<br />

Architecture <strong>of</strong> the proposed second-order combline b<strong>and</strong>pass filter.<br />

I. INTRODUCTION<br />

MULTIPLE OR wide b<strong>and</strong>s are the current trends in the<br />

modern telecommunication system. In order to realize<br />

multib<strong>and</strong> behavior, RF transceivers with larger b<strong>and</strong>width <strong>and</strong><br />

higher flexibility are utilized. To simultaneously achieve multifunction,<br />

high performance, <strong>and</strong> smaller chip size, the technologies<br />

<strong>of</strong> integrating passive circuits are attractive for microwave<br />

<strong>and</strong> millimeter-wave applications. To this end, low-temperature<br />

co-fired ceramic (<strong>LTCC</strong>) [1]–[9] is one <strong>of</strong> the most efficient<br />

methods for miniaturizing <strong>and</strong> packaging technologies<br />

[10]–[13], as <strong>LTCC</strong> can bundle both passive <strong>and</strong> active components<br />

into a single module to meet the system-in-a-package<br />

(SiP) requirement.<br />

The b<strong>and</strong>pass filter is one <strong>of</strong> the most important components<br />

in the RF front-end. It can select passb<strong>and</strong> frequencies <strong>and</strong> reduce<br />

interferences arising from adjacent frequency channels.<br />

<strong>B<strong>and</strong>pass</strong> filters are used to design the diplexer <strong>and</strong> triplexer<br />

[14]–[18].<br />

In this paper, we propose a novel design <strong>of</strong> a b<strong>and</strong>pass filter,<br />

as shown in Fig. 1, which has the advantage <strong>of</strong> controlling the location<br />

<strong>of</strong> a transmission zero via adjusting the coupling scheme<br />

<strong>of</strong> the parallel-coupled line <strong>and</strong> cross-coupled capacitor. A multilayered<br />

diplexer <strong>and</strong> triplexer developed with the proposed<br />

Manuscript received July 20, 2005; revised October 5, 2005 <strong>and</strong> October 24,<br />

2005. This work was supported in part by the National Science Council, Taiwan,<br />

R.O.C., under Grant NSC 94-2213-E-194-028.<br />

C.-W. Tang is with the Department <strong>of</strong> Electrical Engineering <strong>and</strong> Department<br />

<strong>of</strong> Communications Engineering, Center for Telecommunication Research,<br />

National Chung Cheng University, Chiayi 621, Taiwan, R.O.C. (e-mail:<br />

cwtang@ccu.edu.tw).<br />

S.-F. You is with the Department <strong>of</strong> Electrical Engineering, National Chung<br />

Cheng University, Chiayi 621, Taiwan, R.O.C.<br />

Digital Object Identifier 10.1109/TMTT.2005.862638<br />

Fig. 2. Equivalent circuit <strong>of</strong> the second-order combline b<strong>and</strong>pass filter.<br />

(a) Transformed cross-coupled capacitor C . (b) Transformed parallel-coupled<br />

line.<br />

b<strong>and</strong>pass filter are presented. This paper is organized as follows.<br />

In Section II, we first present a theorem that is required for filter<br />

synthesis. Structures <strong>of</strong> filters with transmission zeros are then<br />

provided in Section III. Finally, some designs <strong>and</strong> fabrications<br />

<strong>of</strong> both the diplexer <strong>and</strong> triplexer are given in the Section IV.<br />

Our conclusion is given in Section V.<br />

II. DESIGN THEORY<br />

To analyze the proposed filter, we will adopt the technique <strong>of</strong><br />

the immittance inverter [19], [20]. The second-order combline<br />

b<strong>and</strong>pass filter is composed <strong>of</strong> a cross-coupled capacitor ,a<br />

parallel-coupled line, <strong>and</strong> two grounded capacitors . Fig. 2<br />

shows the equivalent circuits <strong>of</strong> the transformed cross-coupled<br />

capacitor <strong>and</strong> the transformed parallel-coupled line. The<br />

equivalent circuit <strong>and</strong> even- <strong>and</strong> odd-mode line impedances can<br />

be expressed as<br />

(1)<br />

0018-9480/$20.00 © 2006 IEEE


718 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 2, FEBRUARY 2006<br />

Fig. 3.<br />

filter.<br />

Equivalent circuit <strong>of</strong> the proposed second-order combline b<strong>and</strong>pass<br />

Fig. 5. Transformations for the matching circuit in the source <strong>and</strong> load ports.<br />

(a) Positive J-inverter. (b) Negative J-inverter.<br />

is resonance at the central frequency, which will result<br />

in . The capacitor can be derived as<br />

Fig. 4.<br />

Equivalent circuit <strong>of</strong> the generalized b<strong>and</strong>pass filter.<br />

where <strong>and</strong> are, respectively, the odd- <strong>and</strong> even-mode<br />

admittances <strong>of</strong> coupled transmission line, <strong>and</strong> is the corresponding<br />

electric length.<br />

Adding two circuits shown in Fig. 2, <strong>and</strong> shunting with two<br />

grounded capacitors at two ports separately yields the complete<br />

equivalent circuit <strong>of</strong> the b<strong>and</strong>pass filter, as shown in Fig. 3.<br />

Thus, we can apply the immittance inverter to analyze <strong>and</strong> design<br />

b<strong>and</strong>pass filters. The admittance inverter <strong>and</strong> capacitor<br />

are derived as<br />

Following the equivalent circuit in Fig. 3, the equivalent circuit<br />

<strong>of</strong> the generalized b<strong>and</strong>pass filter can also be expressed as<br />

Fig. 4, which includes the admittance inverter. The admittance<br />

inverters, susceptance, <strong>and</strong> its slope parameter are, respectively,<br />

given by<br />

(2)<br />

(3)<br />

(4)<br />

(5)<br />

(6)<br />

(7)<br />

(8)<br />

(9)<br />

(10)<br />

where the ’s are the element values <strong>of</strong> the prototype lowpass<br />

filter, is the fractional b<strong>and</strong>width, <strong>and</strong> <strong>and</strong> are<br />

the impedances <strong>of</strong> source <strong>and</strong> load transmission lines, respectively<br />

[19].<br />

(11)<br />

where <strong>and</strong> are electrical length <strong>and</strong> angular frequency at<br />

the central frequency, respectively.<br />

The b<strong>and</strong>pass filter with a transmission zero located at the<br />

angular frequency will make . at the center<br />

frequency <strong>and</strong> can be derived as<br />

when<br />

when<br />

(12)<br />

(13)<br />

The matching circuits located at source <strong>and</strong> load ports,<br />

as shown in Fig. 1, can be implemented using the following<br />

methods. Note that the quarter-wavelength transmission line is<br />

the simplest form <strong>of</strong> inverters <strong>and</strong>, on the other h<strong>and</strong>, the inductance<br />

or capacitance -network to substitute the -inverter<br />

is the other method. Since the negative inductance or capacitance<br />

cannot be employed to the source or load impedance, a<br />

transformation is needed, as shown in Fig. 5. These equations<br />

are revealed as<br />

III. FILTER DESIGN WITH TRANSMISSION ZERO<br />

(14)<br />

(15)<br />

(16)<br />

(17)<br />

Here, two examples are presented to explain the location <strong>of</strong><br />

the frequency <strong>of</strong> the transmission zero, which will appear at the<br />

lower or higher skirt <strong>of</strong> the passb<strong>and</strong>.


TANG AND YOU: DESIGN METHODOLOGIES OF <strong>LTCC</strong> BANDPASS FILTERS, DIPLEXER, AND TRIPLEXER WITH TRANSMISSION ZEROS 719<br />

Fig. 6. 2.4-GHz b<strong>and</strong>pass filter with the transmission zero at the frequency <strong>of</strong><br />

1.9 GHz. (a) Filter architecture. (b) Simulated results.<br />

A. Circuit Model<br />

The first example is a 2.4-GHz b<strong>and</strong>pass filter. Its center frequency<br />

is set at 2.4 GHz <strong>and</strong> the frequency <strong>of</strong> the transmission<br />

zero is set at 1.9 GHz. The ripple, b<strong>and</strong>width, impedance, <strong>and</strong><br />

electric length <strong>of</strong> the coupled transmission line are chosen as<br />

0.01 dB, 6%, 30 , <strong>and</strong> 12 , respectively. By making use <strong>of</strong><br />

(1)–(17) derived in Section II, one can show that the parameters<br />

<strong>of</strong> the cross-coupled capacitor , even- <strong>and</strong> odd-mode impedances<br />

<strong>and</strong> <strong>of</strong> the parallel-coupled line, <strong>and</strong> grounded capacitors<br />

are equal to 3.93 pF, 39.24 , 24.28 , <strong>and</strong> 6.47 pF,<br />

respectively. Therefore, is 0.0206. A quarter-wavelength<br />

transmission line is utilized to form the matching circuit, <strong>and</strong>,<br />

hence, the impedance <strong>of</strong> this transmission line is 48.47 , which<br />

is close to 50 , which is the vale <strong>of</strong> the system impedance.<br />

Therefore, the matching circuit can be neglected <strong>and</strong> the secondorder<br />

combline b<strong>and</strong>pass filter can be connected directly to the<br />

input <strong>and</strong> output ports, as shown in Fig. 6(a). These derived parameters<br />

<strong>and</strong> are substituted into the circuit<br />

simulator such as ADS or equivalent s<strong>of</strong>tware to carry out the<br />

circuit simulation. Simulation results <strong>of</strong> the 2.4-GHz b<strong>and</strong>pass<br />

filter are presented in Fig. 6(b).<br />

Fig. 7. 2-GHz b<strong>and</strong>pass filter with the transmission zero at the frequency <strong>of</strong><br />

2.5 GHz. (a) Filter architecture. (b) Simulated results.<br />

A 2-GHz b<strong>and</strong>pass filter is taken as the second example. Its<br />

center frequency is set at 2 GHz <strong>and</strong> the frequency <strong>of</strong> the transmission<br />

zero is set at 2.5 GHz. The ripple, b<strong>and</strong>width, impedance,<br />

<strong>and</strong> electric length <strong>of</strong> the coupled transmission line are set as 0.01<br />

dB, 7%, 30 , <strong>and</strong> 30 , respectively. The structure in Fig. 5(b)<br />

can be applied to the transformation for the matching circuit in<br />

the source <strong>and</strong> load ports. Fig. 7(a) shows the equivalent circuit<br />

<strong>of</strong> the b<strong>and</strong>pass filter with the transmission zero at the higher skirt<br />

<strong>of</strong> the passb<strong>and</strong>. Here, the parameters <strong>of</strong> the cross-coupled capacitor<br />

, even- <strong>and</strong> odd-mode impedances <strong>and</strong> <strong>of</strong> the parallel-coupled<br />

line, the grounded capacitors , <strong>and</strong> source <strong>and</strong><br />

load capacitors are calculated as 1.26 pF, 54.96 , 20.63 ,<br />

2.54 pF, <strong>and</strong> 0.8 pF, respectively. Simulation results <strong>of</strong> this 2-GHz<br />

b<strong>and</strong>pass filter are presented in Fig. 7(b).<br />

B. EM Simulation <strong>and</strong> Measurement<br />

Prior to designing the circuit, the exact parameter values <strong>of</strong><br />

ceramic sheets such as the dielectric constant <strong>and</strong> layer thickness<br />

should be known first. These values are very significant to<br />

extract physical parameters <strong>and</strong> can be critical in constructing<br />

the equivalent circuit [21].


720 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 2, FEBRUARY 2006<br />

Fig. 8. Fabricated 2.4-GHz b<strong>and</strong>pass filter with transmission zero at the<br />

frequency <strong>of</strong> 1.9 GHz. (a) 3-D structure. (b) Measured <strong>and</strong> EM simulated<br />

results.<br />

Two filters mentioned above are fabricated with the substrate<br />

<strong>of</strong> Dupont 951. Their dielectric constant <strong>and</strong> loss tangent are 7.8<br />

<strong>and</strong> 0.0045, respectively. The 2.4-GHz <strong>LTCC</strong> filter is designed<br />

on one upper layer with the sheet <strong>of</strong> 1.57 mil, six middle layers<br />

with the sheet <strong>of</strong> 3.6 mil, <strong>and</strong> three lower layers with the sheet<br />

<strong>of</strong> 1.57 mil. Its overall size is 110 mil 92 mil 28 mil. After<br />

circuit simulation, these values are converted into the <strong>LTCC</strong><br />

structure. The simulation is carried out with the assistant <strong>of</strong> the<br />

full-wave electromagnetic (EM) simulator Sonnet from Sonnet<br />

S<strong>of</strong>tware Inc., North Syracuse, NY. In the 3-D structure, the parallel-coupled<br />

line is placed on the lower layer to reduce the coupling<br />

effect with other capacitors. Fig. 8(a) shows the three-dimensional<br />

(3-D) structure <strong>of</strong> 2.4-GHz <strong>LTCC</strong> b<strong>and</strong>pass filter.<br />

The on-wafer tester has been chosen to improve the accuracy <strong>of</strong><br />

measurement. The network analyzer Agilent N5230A PNA_L<br />

is used to measure, <strong>and</strong> the short-open-load-through (SOLT) is<br />

adopted to calibrate.<br />

Fig. 9. Fabricated 2-GHz b<strong>and</strong>pass filter with transmission zero at the<br />

frequency <strong>of</strong> 2.5 GHz. (a) 3-D structure. (b) Measured <strong>and</strong> EM simulated<br />

results.<br />

As shown in Fig. 8(b), the frequencies <strong>of</strong> measured <strong>and</strong> EM<br />

simulated transmission zeros are 1.84 <strong>and</strong> 1.9 GHz, respectively.<br />

At the frequency <strong>of</strong> 2.4 GHz, the measured <strong>and</strong> EM simulated<br />

insertion losses are less than 1.44 <strong>and</strong> 1.3 dB, respectively; the<br />

return losses are greater than 15 <strong>and</strong> 17 dB, respectively.<br />

A 2-GHz b<strong>and</strong>pass filter is given as another design example.<br />

This 2-GHz <strong>LTCC</strong> filter is designed on five upper layers with the<br />

sheet <strong>of</strong> 3.6 mil, four middle layers with the sheet <strong>of</strong> 1.57 mil,<br />

<strong>and</strong> two lower layers with the sheet <strong>of</strong> 3.6 mil. Its overall size<br />

is 107 mil 102 mil 32 mil. The 3-D structure <strong>of</strong> the 2-GHz<br />

<strong>LTCC</strong> b<strong>and</strong>pass filter is shown in Fig. 9(a). In the 3-D structure,<br />

the parallel-coupled line is the same placed on the lower layer<br />

to reduce the coupling effect with other capacitors. As shown<br />

in Fig. 9(b), the frequencies <strong>of</strong> the measured <strong>and</strong> EM simulated<br />

transmission zeros are 2.45 <strong>and</strong> 2.5 GHz, respectively. At the<br />

frequency <strong>of</strong> 2 GHz, the measured <strong>and</strong> EM simulated insertion<br />

losses are less than 1.45 <strong>and</strong> 1.26 dB, respectively; the return<br />

losses are greater than 19 <strong>and</strong> 39 dB, respectively.<br />

The <strong>LTCC</strong> technology is a kind <strong>of</strong> thick-film process. In order<br />

to realize the physical 3-D circuit, the parasitic effect among ca-


TANG AND YOU: DESIGN METHODOLOGIES OF <strong>LTCC</strong> BANDPASS FILTERS, DIPLEXER, AND TRIPLEXER WITH TRANSMISSION ZEROS 721<br />

Fig. 11. <strong>Diplexer</strong> designed with multilayered structure. (a) Photograph.<br />

(b) Measured responses.<br />

Fig. 10. <strong>Diplexer</strong> designed with multilayered structure. (a) Equivalent circuit.<br />

(b) EM simulated responses.<br />

pacitors may cause their model differing from the ideal values<br />

provided by the circuit simulator. Figs. 8(b) <strong>and</strong> 9(b) show the<br />

measured <strong>and</strong> EM simulated responses, which involve the parasitic<br />

effect <strong>and</strong> substrate loss. These effects may cause the measured<br />

<strong>and</strong> EM simulated results such as Figs. 8(b) <strong>and</strong> 9(b) to<br />

not exactly be the same as the ones in Figs. 6(b) <strong>and</strong> 7(b).<br />

In this paper, we design our examples with the substrate <strong>of</strong><br />

Dupont 951. Even though the thick-film process may provide<br />

the linewidth variation within 5% in the plane surface, it can<br />

still provide good repeatability. 1 Compared with their EM simulation,<br />

the measured frequencies <strong>of</strong> transmission zeros in the<br />

fabricated circuits merely shifted 3.2% <strong>and</strong> 2% downward, as<br />

shown in Fig. 8(b) <strong>and</strong> 9(b), respectively. Moreover, with a fixed<br />

sintering pr<strong>of</strong>ile, stable dielectric constant <strong>and</strong> layer thickness<br />

1 DuPont Green Tape Material Systems. [Online]. Available: http://www.<br />

mcm.dupont.com/MCM/en_US/Products/greentape/green_tape.html<br />

can be obtained in the <strong>LTCC</strong> process <strong>and</strong> the resultant fabricated<br />

circuits are not sensitive to the temperature variation within the<br />

range <strong>of</strong> 40 C– C.<br />

IV. SYNTHESIS OF DIPLEXER AND TRIPLEXER<br />

The proposed second-order b<strong>and</strong>pass filter can be employed<br />

to develop the diplexer <strong>and</strong> triplexer.<br />

A. <strong>Diplexer</strong><br />

The diplexer developed from 2- <strong>and</strong> 2.4-GHz b<strong>and</strong>pass filters<br />

is taken as the design example. Two filters are connected<br />

with the matching line to form a diplexer as shown in Fig. 10(a).<br />

There are two transmission zeros, which can increase the isolation<br />

between two frequency b<strong>and</strong>s, generated by 2- <strong>and</strong> 2.4-GHz<br />

b<strong>and</strong>pass filters. Their frequencies are 2.58 <strong>and</strong> 1.86 GHz, respectively.<br />

Two passb<strong>and</strong>s <strong>of</strong> 2- <strong>and</strong> 2.4-GHz b<strong>and</strong>pass filters<br />

are within 1.8–2 <strong>and</strong> 2.4–2.5 GHz, respectively. The EM simulated<br />

results <strong>of</strong> the diplexer are expressed in Fig. 10(b).<br />

The diplexer is fabricated with the substrate <strong>of</strong> Dupont 951.<br />

Its dielectric constant <strong>and</strong> loss tangent are 7.8 <strong>and</strong> 0.0045, respectively.<br />

The <strong>LTCC</strong> diplexer is designed based on four upper


722 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54, NO. 2, FEBRUARY 2006<br />

Fig. 13. Triplexer designed with multilayered structure. (a) Photograph.<br />

(b) Measured responses.<br />

Fig. 12. Triplexer designed with multilayered structure. (a) Equivalent circuit.<br />

(b) EM simulated responses.<br />

layers with the sheet <strong>of</strong> 1.57 mil, six middle layers with the sheet<br />

<strong>of</strong> 3.6 mil, <strong>and</strong> four lower layers with the sheet <strong>of</strong> 1.57 mil.<br />

Its overall size is 250 mil 100 mil 34 mil. The photograph<br />

<strong>of</strong> <strong>LTCC</strong> diplexer is shown in Fig. 11(a). The on-wafer tester<br />

has been utilized in order to improve the accuracy <strong>of</strong> measurement.<br />

As shown in Fig. 11(b), the frequencies <strong>of</strong> the measured<br />

transmission zeros are 1.85 <strong>and</strong> 2.55 GHz. The measured insertion<br />

losses within two passb<strong>and</strong>s <strong>of</strong> 1.8–2 <strong>and</strong> 2.4–2.5 GHz<br />

are less than 1.66 <strong>and</strong> 1.7 dB, respectively; the return losses are<br />

greater than 11.2 <strong>and</strong> 14.4 dB, respectively. The measured isolation<br />

(not shown in this paper) between two passb<strong>and</strong>s is greater<br />

than 30 dB. Figs. 10(b) <strong>and</strong> 11(b) show that the measured results<br />

also match well with the EM simulation.<br />

B. Triplexer<br />

The diplexer developed in Section IV-A <strong>and</strong> the proposed<br />

second-order b<strong>and</strong>pass filter connected with the matching line<br />

could form the triplexer shown in Fig. 12(a). Three passb<strong>and</strong>s <strong>of</strong><br />

1-, 2-, <strong>and</strong> 2.4-GHz b<strong>and</strong>pass filters are within 0.9–1, 1.8–2, <strong>and</strong><br />

2.4–2.5 GHz, respectively. There is a transmission zero generated<br />

by the 1-GHz b<strong>and</strong>pass filter at the frequency <strong>of</strong> 1.9 GHz.<br />

There are two transmission zeros generated by the diplexer composed<br />

<strong>of</strong> 2- <strong>and</strong> 2.4-GHz b<strong>and</strong>pass filters at the frequencies <strong>of</strong><br />

2.56 <strong>and</strong> 1.88 GHz, respectively. The EM simulated results <strong>of</strong><br />

triplexer are expressed in Fig. 12(b).<br />

The triplexer is fabricated with the substrate <strong>of</strong> Dupont 951<br />

as well. Its dielectric constant <strong>and</strong> loss tangent are 7.8 <strong>and</strong><br />

0.0045, respectively. The <strong>LTCC</strong> triplexer is designed based on<br />

four upper layers with the sheet <strong>of</strong> 1.57 mil, six middle layers<br />

with the sheet <strong>of</strong> 3.6 mil, <strong>and</strong> four lower layers with the sheet<br />

<strong>of</strong> 1.57 mil. Its overall size is 239 mil 214 mil 34 mil. The<br />

photograph <strong>of</strong> the <strong>LTCC</strong> triplexer is presented in Fig. 13(a).<br />

The on-wafer tester has been employed in order to improve<br />

the accuracy <strong>of</strong> measurement. As shown in Fig. 13(b), the<br />

frequencies <strong>of</strong> measured transmission zero are 1.88, 2.44, <strong>and</strong><br />

1.89 GHz for the 1-, 2-, <strong>and</strong> 2.4-GHz b<strong>and</strong>pass filters, respec-


TANG AND YOU: DESIGN METHODOLOGIES OF <strong>LTCC</strong> BANDPASS FILTERS, DIPLEXER, AND TRIPLEXER WITH TRANSMISSION ZEROS 723<br />

tively. The measured insertion losses within three passb<strong>and</strong>s<br />

<strong>of</strong> 0.9–1, 1.8–2, <strong>and</strong> 2.4–2.5 GHz are less than 1.9, 1.55, <strong>and</strong><br />

2.4 dB, respectively; the return losses are the greater than 11,<br />

13.6, <strong>and</strong> 10.8 dB, respectively. The measured isolation (not<br />

shown in this paper) among three passb<strong>and</strong>s is greater than<br />

25 dB. As shown in Figs. 12(b) <strong>and</strong> 13(b), the measured results<br />

also match well with the EM simulation.<br />

V. CONCLUSION<br />

The newly designed <strong>LTCC</strong> b<strong>and</strong>pass filters have been proposed<br />

in this paper. This filter can be used to develop the<br />

diplexer <strong>and</strong> triplexer as well. The fabricated b<strong>and</strong>pass filters,<br />

diplexer, <strong>and</strong> triplexer with the advantages <strong>of</strong> high integration<br />

<strong>and</strong> small size are very suitable for implementation in<br />

the multichip module. With the parallel-coupled line <strong>and</strong> the<br />

cross-coupled capacitor, transmission zeros, which can increase<br />

isolation <strong>of</strong> different passb<strong>and</strong>s, can be easily generated at lower<br />

or higher passb<strong>and</strong> skirts. Agreement between measurement<br />

<strong>and</strong> theoretical prediction has evidenced the feasibility <strong>of</strong> our<br />

study.<br />

ACKNOWLEDGMENT<br />

The authors would like to thanks the reviewers <strong>of</strong> this paper’s<br />

manuscript for their helpful comments.<br />

[11] A. B. Frazier, R. O. Warringtun, <strong>and</strong> C. Friedrich, “The miniaturization<br />

technologies: Past, present, <strong>and</strong> future,” IEEE Trans. Ind. Electron., vol.<br />

42, no. 5, pp. 423–430, Oct. 1995.<br />

[12] A. Matsuzawa, “RF-SoC—Expectations <strong>and</strong> required conditions,” IEEE<br />

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single-input single-output dual-b<strong>and</strong> filter,” in IEEE MTT-S Int. Microw.<br />

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multiple capacitively loaded coupled lines,” in IASTED Int. Antennas,<br />

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REFERENCES<br />

[1] K. Kunihiro, S. Yamanouchi, T. Miyazaki, Y. Aoki, K. Ikuina, T. Ohtsuka,<br />

<strong>and</strong> H. Hida, “A diplexer-matching dual-b<strong>and</strong> power amplifier<br />

<strong>LTCC</strong> module for IEEE 802.11a/b/g wireless LANs,” in IEEE Radio<br />

Freq. Integr. Circuits Symp. Dig., 2004, pp. 303–306.<br />

[2] J. Muller <strong>and</strong> H. Thust, “3D-integration <strong>of</strong> passive RF-components in<br />

<strong>LTCC</strong>,” in Pan Pacific Microelectron. Symp. Dig., 1997, pp. 211–216.<br />

[3] C. Q. Scrantom <strong>and</strong> J. C. Lawson, “<strong>LTCC</strong> technology: Where we are<br />

<strong>and</strong> where we’re going—II,” in IEEE MTT-S Int. Microw. Symp. Dig.,<br />

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[4] Y. Rong, K. A. Zaki, M. Hageman, D. Stevens, <strong>and</strong> J. Gipprich, “Low<br />

temperature c<strong>of</strong>ired ceramic (<strong>LTCC</strong>) ridge waveguide b<strong>and</strong>pass filters,”<br />

in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 1999, pp. 1147–1150.<br />

[5] D. Heo, A. Sutono, E. Chen, Y. Suh, <strong>and</strong> J. Laskar, “A 1.9 GHz DECT<br />

CMOS power amplifier with fully integrated multilayer <strong>LTCC</strong> passives,”<br />

IEEE Microw. Wireless Compon. Lett., vol. 11, no. 6, pp. 249–251, Jun.<br />

2001.<br />

[6] C. W. Tang, J. W. Sheen, <strong>and</strong> C. Y. Chang, “Chip-type <strong>LTCC</strong>–MLC<br />

baluns using the stepped impedance method,” IEEE Trans. Microw.<br />

Theory Tech., vol. 49, no. 12, pp. 2342–2349, Dec. 2001.<br />

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<strong>of</strong> <strong>LTCC</strong> filters with enhanced stop-b<strong>and</strong> characteristics for Bluetooth<br />

applications,” in Proc. Asia–Pacific Microw. Conf., Dec. 2001, pp.<br />

1008–1011.<br />

[8] C. W. Tang, Y. C. Lin, <strong>and</strong> C. Y. Chang, “Realization <strong>of</strong> transmission<br />

zeros in combline filters using an auxiliary inductively-coupled<br />

ground plane,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 10, pp.<br />

2112–2118, Oct. 2003.<br />

[9] C. W. Tang, “Harmonic-suppression <strong>LTCC</strong> filter with the step<br />

impedance quarter-wavelength open stub,” IEEE Trans. Microw.<br />

Theory Tech., vol. 52, no. 2, pp. 617–624, Feb. 2004.<br />

[10] Y. L. Low <strong>and</strong> R. C. Frye, “The impact <strong>of</strong> miniaturization <strong>and</strong> passive<br />

component integration in emerging MCM applications,” in IEEE Multi-<br />

Chip Module Conf., 1997, pp. 27–32.<br />

Ching-Wen Tang (S’02–M’03) received the B.S.<br />

degree in electronic engineering from Chung Yuan<br />

Christian University, Chungli, Taiwan, R.O.C., in<br />

1991, <strong>and</strong> the M.S. <strong>and</strong> Ph.D. degree in communication<br />

engineering from National Chiao Tung<br />

University, Hsinchu, Taiwan, R.O.C., in 1996 <strong>and</strong><br />

2002, respectively.<br />

In 1997, he joined the RF Communication<br />

Systems Technology Department, Computer <strong>and</strong><br />

Communication Laboratories, Industrial Technology<br />

Research Institute (ITRI), Hsinchu, Taiwan, R.O.C.,<br />

as an RF Engineer, where he developed <strong>LTCC</strong> multilayer circuit (MLC) RF<br />

components. In 2001, he joined Phycomp Taiwan Ltd., Kaohsiung, Taiwan,<br />

R.O.C., as a Project Manager, where he continues to develop <strong>LTCC</strong> components<br />

<strong>and</strong> modules. Since February 2003, he has been with the Department <strong>of</strong> Electrical<br />

Engineering <strong>and</strong> Department <strong>of</strong> Communications Engineering, Center<br />

for Telecommunication Research, National Chung Cheng University, Chiayi,<br />

Taiwan, R.O.C., where he is currently an Assistant Pr<strong>of</strong>essor. His research<br />

interests include microwave <strong>and</strong> millimeter-wave planar-type <strong>and</strong> multilayered<br />

circuit design, <strong>and</strong> the analysis <strong>and</strong> design <strong>of</strong> thin-film components.<br />

Sheng-Fu You was born in Changhua, Taiwan,<br />

R.O.C., on December 12, 1980. He received the<br />

B.S. degree in electronic engineering from Feng<br />

Chia University, Taichung, Taiwan, R.O.C., in 2003,<br />

<strong>and</strong> the M.S. degree in electrical engineering from<br />

National Chung Cheng University, Chiayi, Taiwan,<br />

R.O.C., in 2005.<br />

His research interests include the design <strong>of</strong><br />

microwave planar <strong>and</strong> multilayered filers <strong>and</strong> associated<br />

RF components.

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