FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
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IBM Semiconductor Research <strong>and</strong> Development Center<br />
The Main Event – why <strong>SOI</strong> FinFETs are better<br />
• Fully Depleted Transistors: FD<strong>SOI</strong> <strong>and</strong> FinFETs<br />
– Similarities<br />
Electrostatics<br />
Access resistance<br />
Threshold fluctuations<br />
– Differences<br />
Physical Orientation<br />
Density <strong>and</strong> “fin effect”<br />
Backgate <strong>and</strong> body effect<br />
• FinFETs on <strong>SOI</strong> <strong>and</strong> bulk substrates<br />
– Process Comparison<br />
– Fin Taper<br />
– <strong>Isolation</strong> doping<br />
Intrawell/Interwell<br />
Drain-source<br />
– Self-heating <strong>and</strong> history effect<br />
– Transistor mismatch<br />
– Work function <strong>and</strong> gate reliability<br />
– Process variations<br />
• Conclusion<br />
FD<strong>SOI</strong> Workshop Hsinchu, Taiwan April 22, 2013
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