FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
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IBM Semiconductor Research <strong>and</strong> Development Center<br />
Conclusions<br />
• FinFETs with <strong>SOI</strong> <strong>and</strong> bulk isolation architectures have been compared<br />
• Key differences:<br />
– Tapered fin profile intrinsic to bulk degrades electrostatics <strong>and</strong> uniformity<br />
– Inter <strong>and</strong> Intrawell junction isolation requires well implants <strong>and</strong> latchup prevention<br />
methods<br />
– Suppression of sub-fin leakage requires doping<br />
Doping degrades transistor matching <strong>and</strong> therefore low-voltage operation<br />
Doping requires work function nearer b<strong>and</strong>-edge, therefore degrades reliability<br />
Net result is closure of voltage range window<br />
– Larger fin height variation <strong>and</strong> influence of sub-fin conduction region result in larger<br />
Ieff variation in bulk <strong>and</strong> therefore loss of potential performance<br />
–<br />
• <strong>SOI</strong>-based FinFET obviates many challenges to realization of FinFET potential<br />
• <strong>SOI</strong>-based FinFET is extendable<br />
• IBM technology offering is based on <strong>SOI</strong><br />
FD<strong>SOI</strong> Workshop Hsinchu, Taiwan April 22, 2013
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