FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
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IBM Semiconductor Research <strong>and</strong> Development Center<br />
Bulk <strong>and</strong> <strong>SOI</strong> Variation<br />
• Gate recess: <strong>SOI</strong> FinFET is<br />
nearly unaffected by gate<br />
recess variation<br />
• Fin Height: <strong>SOI</strong> fin height is<br />
less variable than bulk.<br />
• Doping: Bulk FinFET is<br />
affected by global doping<br />
variation in addition to RDF<br />
• Fin width: Bulk FinFET has<br />
less sensitivity to fin width is<br />
because of the doping<br />
• Overall: Variation due to<br />
these critical fin formation<br />
features is smaller in <strong>SOI</strong><br />
than bulk<br />
FD<strong>SOI</strong> Workshop Hsinchu, Taiwan April 22, 2013
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