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FINFET Isolation Approaches and Ramifications - SOI Industry ...

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IBM Semiconductor Research <strong>and</strong> Development Center<br />

Fin Taper: detrimental to device performance<br />

• Electrostatics <strong>and</strong><br />

current density vary<br />

through fin height<br />

• Massive doping<br />

suppresses some<br />

contribution of fat-fin<br />

region but current<br />

degraded<br />

• Output conductance<br />

for <strong>SOI</strong> with vertical fin<br />

empirically<br />

demonstrated to be<br />

superior to bulk with<br />

tapered fin<br />

FD<strong>SOI</strong> Workshop Hsinchu, Taiwan April 22, 2013

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