FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
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IBM Semiconductor Research <strong>and</strong> Development Center<br />
Matching<br />
• Matching is affected by<br />
several components:<br />
– Physical variations<br />
such as line-edgeroughness<br />
– Electrical variations<br />
such as metal-gate<br />
work function<br />
variations<br />
– Doping variations<br />
subject to classic<br />
Poisson statistical<br />
variations<br />
• Undoped FinFET <strong>and</strong><br />
FD<strong>SOI</strong> are comparable<br />
calculted σΔVt (mV)<br />
40<br />
30<br />
20<br />
10<br />
IEDM 2011<br />
1.3mV-um<br />
AVT<br />
0<br />
0.00 0.01 0.02 0.03<br />
1/sqrt(LxW) (nm -1 )<br />
VLSI 2011<br />
1.5mV-um<br />
• Adding doping degrades<br />
matching<br />
FD<strong>SOI</strong><br />
FinFET<br />
FD<strong>SOI</strong> Workshop Hsinchu, Taiwan April 22, 2013
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