FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
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IBM Semiconductor Research <strong>and</strong> Development Center<br />
Electrostatics<br />
“Conventional”<br />
FD<strong>SOI</strong><br />
FinFET<br />
Λ<br />
S<br />
Gate<br />
D<br />
Λ/2<br />
S<br />
Gate<br />
BOX<br />
Substrate<br />
D<br />
S<br />
Gate<br />
Gate<br />
D<br />
Λ<br />
Λ = t dep +ε si /ε ox t ox<br />
L ~ 1/√N<br />
• Confinement of field<br />
lines by doping<br />
Λ = 2(t si +ε si /ε ox t ox )<br />
L min ~ 3t si +9t ox<br />
• Confinement of field<br />
lines by BOX<br />
Λ = t si +ε si /ε ox 2t ox<br />
L min ~ 1.5t si +9t ox<br />
• Confinement of field<br />
lines by gates<br />
2004 IEEE <strong>SOI</strong> Short Course<br />
Huang & Nowak<br />
D. Frank, et al.<br />
FD<strong>SOI</strong> Workshop Hsinchu, Taiwan April 22, 2013
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