FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
FINFET Isolation Approaches and Ramifications - SOI Industry ...
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IBM Semiconductor Research <strong>and</strong> Development Center<br />
Doping <strong>and</strong> Vmax<br />
• Bulk FinFETs must have<br />
doping in the sub-fin<br />
region<br />
• For a given off-current,<br />
body doping requires a<br />
work function closer to<br />
b<strong>and</strong> edge <strong>and</strong> the<br />
electric field is larger<br />
• The electric field is<br />
fundamentally associated<br />
with dielectric reliability<br />
Undoped<br />
Doped<br />
Electric potential across the fin from<br />
one side to the other for two design<br />
points with the same threshold<br />
voltage.<br />
The electric field is larger for the<br />
doped fin case.<br />
FD<strong>SOI</strong> Workshop Hsinchu, Taiwan April 22, 2013
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