FINFET Isolation Approaches and Ramifications - SOI Industry ...

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IBM Semiconductor Research and Development Center FinFet Options: Bulk Isolated, Oxide Isolated fin Gate Stack Fin CSD Oxide Oxide Silicon Substrate Silicon Substrate • Bulk isolated – Process complex more expensive – Process integration scheme has process control challenges – Bulk starting wafer • Oxide isolated – Process simpler less expensive – Many control issues improved over bulk isolated FinFet – SOI starting wafer FDSOI Workshop Hsinchu, Taiwan April 22, 2013
IBM Semiconductor Research and Development Center Bulk Isolated FinFet Process (1) RIE etch to create fin and isolation trench Channel Stop Doping Resist • Starting material: Silicon wafer • Add channel stop doping • Etch silicon to create fin and isolation trench – Blind/timed etch (i.e. no etch stop) – Depth control has many variables (local pattern density, etch chemistry, local surface condition, etc.) – Trench must be tapered for good fill Silicon Substrate Ø Fin fin Trench Depth Isolation Trench CSD Silicon Substrate FDSOI Workshop Hsinchu, Taiwan April 22, 2013
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FINFET Isolation Approaches and Ramifications - SOI Industry ...

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