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126<br />

Fig. 15<br />

Transmission diagram<br />

Fig. 16 (right)<br />

Transmission diagram with automatic level<br />

regulation. Sending and receiving<br />

The microphone signal is amplified in<br />

the microphone amplifier (AM) and is<br />

fed out to the line at points B and E,<br />

which also constitute feeding points<br />

for the direct current to the microphone<br />

amplifier.<br />

The speech circuit introduced in ERI-<br />

COFON 700 has no transmission regulation.<br />

However, as the feeding loss<br />

of the microphone is eliminated (constant<br />

amplification of direct currents<br />

from 100 mA down to < 10 mA), the<br />

transmission characteristics of the<br />

non-regulated circuit are better than<br />

those of the traditional carbon <strong>set</strong>.<br />

Further improvement of the transmission<br />

characteristics of the <strong>set</strong> can be<br />

obtained by introducing regulation of<br />

the sending and receiving level, which<br />

compensates the speech frequency attenuation<br />

caused by the subscriber<br />

line in accordance with the following<br />

principle.<br />

A constant sending or receiving level<br />

irrespective of the attenuation of the<br />

subscriber line is obtained by introducing<br />

attenuation networks, Z3 and<br />

Z4 respectively in fig. 16. The value of<br />

the impedance Z3 or Z4 is a function<br />

of the direct current on the line. When<br />

the line current is high, i.e. a short line,<br />

the impedance is low and the level to<br />

the microphone or receiver amplifier is<br />

attenuated. When the length of the line<br />

increases and the direct current decreases,<br />

the impedance in the shunt<br />

circuit increases and a constant level<br />

that is not dependent on the length of<br />

line is obtained in the local exchange<br />

when sending and in the receiver when<br />

receiving. All semiconductor elements<br />

for the microphone and receiver and<br />

for transmission regulation, as well as<br />

the majority of the required resistances,<br />

are assembled in one monolithic<br />

circuit. The monolithic circuit and<br />

the required capacitors are mounted<br />

on a thick film substrate, utilizing the<br />

possibilities offered by the thick film<br />

network for trimming to the nominal<br />

amplification and for adaptation to different<br />

current feed systems. The transmission<br />

circuit is encapsulated in polyuretane,<br />

chosen for its good resistance<br />

to temperature variations. The<br />

size of the complete unit is 7x20X35<br />

mm. The transmission circuit is also<br />

electrically protected against transients<br />

by an external 15 V zener diode.<br />

IMPULSING UNIT<br />

Circuit components<br />

It was necessary to integrate many of<br />

the various functions of the impulsing<br />

unit. Fig. 17 shows a block diagram of<br />

the unit.<br />

The only discrete components used<br />

are capacitors and the diodes and resistors<br />

that could not be integrated in<br />

the blocks to which they belong, for<br />

example because of high precision requirements.<br />

The impulsing unit is protected<br />

against fast transients by a<br />

100 V zener diode.<br />

Functional description<br />

The memory circuit with the associated<br />

logic, V1, is built up around a 4-<br />

phase dynamic shift register having a<br />

capacity of 20 figures. Two of the four<br />

clock pulses (01 and 03) come from<br />

the clock and control circuit V4, and<br />

the other two (02 and 04) are generat-

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