NAND Flash Memory MT29F4G08AAAWP ... - Micron

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4Gb, 8Gb, and 16Gb x8 NAND Flash MemoryCommand DefinitionsTable 7:Two-Plane Command SetCommandCommandCycle 1CommandCycle 2CommandCycle 3NotesTWO-PLANE PAGE READ 00h 5 00h 5 30h No00h 5 00h 5 35h No 1TWO-PLANE READfor INTERNAL DATA MOVENotes:Number ofAddressCyclesNumber ofAddressCyclesValidDuringBusyTWO-PLANE RANDOM DATA READ 06h 5 E0h – – No 2TWO-PLANE/MULTIPLE-DIE78h 3 – – – Yes 3READ STATUSTWO-PLANE PROGRAM PAGE 80h 5 11h-80h 5 10h No 4TWO-PLANE PROGRAM PAGE80h 5 11h-80h 5 15h No 4CACHE MODETWO-PLANE PROGRAM85h 5 11h-80h 5 10h No 1for INTERNAL DATA MOVETWO-PLANE BLOCK ERASE 60h 3 60h 3 D0h No 41. Do not cross plane address boundaries when using TWO-PLANE READ for INTERNAL DATAMOVE and TWO-PLANE PROGRAM for INTERNAL DATA MOVE. See Tables 3 and 4 onpages 13 and 14 for plane address boundary definitions.2. The TWO-PLANE RANDOM DATA READ command is limited to use with the TWO-PLANEPAGE READ command.3. The TWO-PLANE/MULTIPLE-DIE READ STATUS command can be used to check status withtwo-plane and multiple-die operations, excluding the TWO-PLANE PAGE READ (00h-00h-30h) command.4. These commands are valid during busy when performing interleaved die operations. See“Interleaved Die Operations” on page 47 for additional details.PDF: 09005aef81b80e13/Source: 09005aef81b80eacMicron Technology, Inc., reserves the right to change products or specifications without notice.4gb_nand_m40a__2.fm - Rev. B 2/07 EN 20 ©2006 Micron Technology, Inc. All rights reserved.
4Gb, 8Gb, and 16Gb x8 NAND Flash MemoryCommand DefinitionsREAD OperationsPAGE READ 00h-30hAt power-on, the device defaults to READ mode. To enter READ mode while in operation,write the 00h command to the command register, then write 5 ADDRESS cycles,and conclude with the 30h command.To determine the progress of the data transfer from the NAND Flash array to the dataregister ( t R), monitor the R/B# signal or, alternatively, issue a READ STATUS (70h)command. If the READ STATUS command is used to monitor the data transfer, the usermust reissue the READ (00h) command to receive data output from the data register. SeeFigure 65 on page 72 and Figure 66 on page 73 for examples. After the READ commandhas been reissued, pulsing the RE# line will result in outputting data, starting from theinitial column address.A serial page read sequence outputs a complete page of data. After 30h is written, thepage data is transferred to the data register, and R/B# goes LOW during the transfer.When the transfer to the data register is complete, R/B# returns HIGH. At this point, datacan be read from the device. Starting from the initial column address and going to theend of the page, read the data by repeatedly pulsing RE# at the maximum t RC rate (seeFigure 12).Figure 12:PAGE READ OperationCLECE#WE#ALEtRR/B#RE#I/Ox 00h Address (5 cycles) 30hData output ( serial access)Don’t CarePDF: 09005aef81b80e13/Source: 09005aef81b80eacMicron Technology, Inc., reserves the right to change products or specifications without notice.4gb_nand_m40a__2.fm - Rev. B 2/07 EN 21 ©2006 Micron Technology, Inc. All rights reserved.
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Page 7 and 8: List of Tables4Gb, 8Gb, and 16Gb x8
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NAND Flash Memory MT29F4G08AAAWP ... - Micron

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