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NAND Flash Memory MT29F4G08AAAWP ... - Micron

NAND Flash Memory MT29F4G08AAAWP ... - Micron

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4Gb, 8Gb, and 16Gb x8 <strong>NAND</strong> <strong>Flash</strong> <strong>Memory</strong>Command DefinitionsTWO-PLANE PAGE READ 00h-00h-30hThe TWO-PLANE PAGE READ (00h-00h-30h) operation is similar to the PAGE READ(00h-30h) operation. It transfers two pages of data from the <strong>NAND</strong> <strong>Flash</strong> array to thedata registers. Each page must be from a different plane on the same die.To enter the TWO-PLANE PAGE READ mode, write the 00h command to the commandregister, then write 5 ADDRESS cycles for plane 0 (BA6 = 0). Next, write the 00hcommand to the command register, then write 5 ADDRESS cycles for plane 1 (BA6 = 1).Finally, issue the 30h command. The first-plane and second-plane addresses must meetthe two-plane addressing requirements and, in addition, they must have identicalcolumn addresses.After the 30h command is written, page data is transferred from both planes to theirrespective data registers in t R. During these transfers, R/B# goes LOW. When the transfersare complete, R/B# goes HIGH. To read out the data from the plane 0 data register,pulse RE# repeatedly. After the data cycle from the plane 0 address completes, issue aTWO-PLANE RANDOM DATA READ (06h-E0h) command to select the plane 1 address,then repeatedly pulse RE# to read out the data from the plane 1 data register.Alternatively, the READ STATUS (70h) command can monitor data transfers. When thetransfers are complete, status register bit 6 is set to “1.” To read data from the first of thetwo planes, the user must first issue the TWO-PLANE RANDOM DATA READ (06h-E0h)command (see “TWO-PLANE RANDOM DATA READ 06h-E0h”) and pulse RE# repeatedly.When the data cycle is complete, issue a TWO-PLANE RANDOM DATA READ (06h-E0h) command to select the other plane. To output the data beginning at the specifiedcolumn address, pulse RE# repeatedly.Use of the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command is prohibitedduring and following a TWO-PLANE PAGE READ operation.TWO-PLANE RANDOM DATA READ 06h-E0hThe TWO-PLANE RANDOM DATA READ (06h-E0h) command is similar to theRANDOM DATA READ (05h-E0h) command, except that it requires 5 ADDRESS cyclesrather than 2. The command selects a die and plane, and a column address from whichto read data after a TWO-PLANE PAGE READ (00h-00h-30h) command.To issue a TWO-PLANE RANDOM DATA READ command, issue the 06h command, then5 ADDRESS cycles, and follow with the E0h command. Pulse RE# repeatedly to read datafrom the new plane, beginning at the specified column address.The primary purpose of the TWO-PLANE RANDOM DATA READ command is to select anew die and plane, and a column address within that die and plane. If a new die andplane do not need to be selected, then it is possible to use the RANDOM DATA READ(05h-E0h) command instead (see “RANDOM DATA READ 05h-E0h” on page 22).PDF: 09005aef81b80e13/Source: 09005aef81b80eac<strong>Micron</strong> Technology, Inc., reserves the right to change products or specifications without notice.4gb_nand_m40a__2.fm - Rev. B 2/07 EN 36 ©2006 <strong>Micron</strong> Technology, Inc. All rights reserved.

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