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TCSPC for FLIM and FRET in - Boston Electronics Corporation

TCSPC for FLIM and FRET in - Boston Electronics Corporation

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fluorescence photons the situation is less clear. It has also been found that photobleach<strong>in</strong>g is morerapid <strong>for</strong> two-photon excitation [41,42].For two-photon excitation the dependence of the photobleach<strong>in</strong>g efficiency on the excitation poweris highly nonl<strong>in</strong>ear. For photobleach<strong>in</strong>g versus excitation power exponents of 2.5 [45] <strong>and</strong> from 3 to5 <strong>for</strong> have been found [43]. At the same time the emission followed the excitation <strong>in</strong>tensity by theexpected power of 2. That means photobleach<strong>in</strong>g <strong>in</strong>creases more than l<strong>in</strong>early with the emission<strong>in</strong>tensity. There<strong>for</strong>e two-photon excitation can easily cause 10 times faster photobleach<strong>in</strong>g than onephotonexcitation <strong>for</strong> the same emission <strong>in</strong>tensity [43].Although photobleach<strong>in</strong>g is the most crucial constra<strong>in</strong>t <strong>for</strong> scann<strong>in</strong>g microscopy the question aboutthe excitation method is still open. The consequence from the controversial situation is not to relyon two-photon excitation alone. For all lasers commonly used <strong>for</strong> two-photon excitation frequencydoubl<strong>in</strong>g is available <strong>and</strong> delivers sufficient power <strong>for</strong> one-photon excitation.Signal Process<strong>in</strong>g TechniquesGated Image IntensifiersGat<strong>in</strong>g an image <strong>in</strong>tensifier is achieved by plac<strong>in</strong>g agrid beh<strong>in</strong>d the photocathode. The pr<strong>in</strong>ciple issimilar as <strong>for</strong> the grid <strong>in</strong> a radio tube. As long as thegrid voltage is negative referred to thephotocathode the photoelectrons cannot pass thegrid. When a positive pulse is applied the electronspass through the meshes of the grid <strong>and</strong> areaccelerated towards the multichannel plate or <strong>in</strong>tothe acceleration system.Although gat<strong>in</strong>g of an image <strong>in</strong>tensifier looks straight<strong>for</strong>ward at fist glance it is anyth<strong>in</strong>g but simple,particularly if sub-ns resolution is to be achieved. Even if a sufficiently short gat<strong>in</strong>g pulse can begenerated electronically the electrical field between the photocathode <strong>and</strong> the grid must follow thepulse at the same speed. Because the conductivity of the photocathode is relatively low the timeconstant <strong>for</strong>med by the gate-cathode capacitance <strong>and</strong> the cathode resistance limits the switch<strong>in</strong>gspeed. Furthermore, a variable lateral field builds up <strong>in</strong> front of the photocathode that distorts theimage <strong>and</strong> impairs the image resolution. Manufacturers counteract these effects by us<strong>in</strong>g highconductivity photocathodes which, however, compromises sensitivity. High efficiency GaAs <strong>and</strong>GaAsP photocathodes as they are used <strong>in</strong> PMTs have particularly low conductivity <strong>and</strong> are mostlikely not applicable <strong>for</strong> gated image <strong>in</strong>tensifiers.Another RC time constant exists between the grid <strong>and</strong> the multichannel plate. Although the changeof the field <strong>in</strong> front of the plate has only small <strong>in</strong>fluence on the gat<strong>in</strong>g per<strong>for</strong>mance it <strong>in</strong>duces alateral current <strong>in</strong> the multichannel plate that heats the device at high gate repetition rates.The gat<strong>in</strong>g resolution can also be impaired be electron-optical effects. When the gate voltage <strong>in</strong> thesetup of fig. 16 is negative a cloud of photoelectrons builds up between the cathode <strong>and</strong> the grid.When a gate pulse is applied to the grid these electrons pass the grid <strong>and</strong> enter the detection system.Depend<strong>in</strong>g on the grid geometry, the lifetime of the photoelectrons between the grid <strong>and</strong> the cathodecan be of the order of some 100 ps.The effects described above can be reduced by additional grids. Even then a lateral change of thegate delay due to the wave propagation <strong>in</strong> the grid structure rema<strong>in</strong>s. This effect is, however,predictable <strong>and</strong> can be corrected <strong>in</strong> the recorded data.Gatepulse-HVPhotocathodeGateMultichannel PlateFluorescence ScreenCCD CameraFig. 16: Gated Image Intensifier15

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