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B. Tech. Production & Industrial Engineering - Shiats.edu.in

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2. To determ<strong>in</strong>e the Ferrous content <strong>in</strong> the supplied sample of iron ore by titrimetric analysisaga<strong>in</strong>st standard K Cr solution us<strong>in</strong>g K, Fe(CN) g as external <strong>in</strong>dicator.3. To determ<strong>in</strong>e the chloride content <strong>in</strong> supplied water sample us<strong>in</strong>g Mohr’s method.4. To determ<strong>in</strong>e the constituents and amount of alkal<strong>in</strong>ity of the supplied water sample.5. To determ<strong>in</strong>e the Temporary and Permanent hardness of water sample by Coplexometry.6. To f<strong>in</strong>d the Chemical Oxygen Demand of a waste water sample us<strong>in</strong>g Potassium dichromate.7. To determ<strong>in</strong>e iron concentration <strong>in</strong> the sample of water by spectrophotometric method.8. To f<strong>in</strong>d out the Velocity constant for the <strong>in</strong>version of cane sugar <strong>in</strong> acidic medium and toshow that <strong>in</strong>version follows the first order k<strong>in</strong>etics.9. To determ<strong>in</strong>e the Molecular weight of a polystyrene sample by us<strong>in</strong>g Viscometer method.10. To determ<strong>in</strong>e pH of a solution us<strong>in</strong>g a pH-meter and titration of such a solution pHmetrically.11. To determ<strong>in</strong>e the calorific value of a fuel sample by us<strong>in</strong>g a Bomb Calorimeter.12. Analysis of a coal sample by proximate analysis method.References:1. Vogel’s Qualitative Chemical Analysis: Ed. By Jaffery Bassette et. al. (ELBS).2. Applied Chemistry- Theory and Practice, 2 nd Ed. By Virmani and Narula (New AgeInternational Pub.).3. Experiments <strong>in</strong> <strong>Eng<strong>in</strong>eer<strong>in</strong>g</strong> Chemistry, Ed. By Masood Alam (Maktaba Jamia Limited).BASIC ELECTRONICS1-1)Course Code ECE-301 CREDIT : 4 (2-1. Energy Bands <strong>in</strong> Solids: Energy band theory of solids, Concept of forbidden gap, Insulators,Metals and Semiconductors.2. Transport Phenomenon <strong>in</strong> Semiconductors: Mobility and conductivity, electrons and holes <strong>in</strong>an <strong>in</strong>tr<strong>in</strong>sic semiconductor, Donor and acceptor impurities, Fermi level, carrier densities <strong>in</strong>semiconductor, electrical properties of semiconductor, Hall effect, Diffusion.3. Junction Diode:P-N junction, depletion layer, V-I characteristics, diode resistance,capacitance, switch<strong>in</strong>g time, diode application as a rectifier (half wave and full wave), diodecircuits (clipper, clamper, voltage multipliers) Breakdown mechanism, Zener & Avalanche,breakdown characteristics, Zener diode and its applications.4. Bi-junction Transistor:Bipolar junction Transistor, CE, CB and CC configuration,characteristic curves (cut off, active and saturation region), Requirement of bias<strong>in</strong>g, bias<strong>in</strong>g typesand bias<strong>in</strong>g analysis, stability.5. Transistor as an Amplifier:Graphical analysis of CE amplifier, concept of voltage ga<strong>in</strong>,current ga<strong>in</strong> and power ga<strong>in</strong>, h-parameter (low frequency), computation of A v , R I , R o andapproximate formulae.6. Operational Amplifiers:Concepts of ideal op-amp, <strong>in</strong>vert<strong>in</strong>g, non-<strong>in</strong>vert<strong>in</strong>g and unity ga<strong>in</strong>amplifiers, adders, difference amplifiers. , Integrators.

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